Inventor
Kevin Sean Matocha
Inventor
Rexford, NY, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01LSemiconductor devices11%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light5%
H03KPulse technique5%
H04MTelephonic communication5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
Y02PClimate change mitigation technologies in the production or processing of goods2%
PatentTitleYear
10,367,089Semiconductor device and method for reduced bias threshold instability20199,735,263'Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the same'20179,406,762'Semiconductor device with junction termination extension'20169,123,798'Insulating gate field effect transistor device and method for providing the same'20158,815,721'Semiconductor device and method of manufacturing the same'20148,697,506'Heterostructure device and associated method'20148,507,986'Silicon-carbide MOSFET cell structure and method for forming same'20138,377,812'SiC MOSFETs and self-aligned fabrication methods thereof'20138,377,756'Silicon-carbide MOSFET cell structure and method for forming same'20138,217,398'Method for the formation of a gate oxide on a SiC substrate and SiC substrates and devices prepared thereby'20128,159,002'Heterostructure device and associated method'20127,906,427'Dimension profiling of SiC devices'20117,829,402'MOSFET devices and methods of making'20107,781,312'Silicon carbide devices and method of making'20107,691,711'Method for fabricating silicon carbide vertical MOSFET devices'20107,595,241'Method for fabricating silicon carbide vertical MOSFET devices'20097,589,360'Group III nitride semiconductor devices and methods of making'20097,521,732'Vertical heterostructure field effect transistor and associated method'20097,517,807'Methods for fabricating semiconductor structures'20097,112,796'System and method for optical monitoring of a combustion flame'20067,002,156'Detection system including avalanche photodiode for use in harsh environments'20066,838,741'Avalanche photodiode for use in harsh environments'20056,784,430'Interdigitated flame sensor, system and method'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2019Patents assigned to GEN ELECTRIC (22)· patent assignee history
2004–2006Based in Troy, NY, US· patent location history
2006–2014Based in Rexford, NY, US· patent location history
2012–2019Patents assigned to MATOCHA KEVIN SEAN (6)· patent assignee history
2012–2014Patents assigned to RAJAN SIDDHARTH (2)· patent assignee history
2013–2019Patents assigned to ARTHUR STEPHEN DALEY (4)· patent assignee history
2013–2019Patents assigned to HAWKINS WILLIAM GREGG (2)· patent assignee history
2013–2019Based in Starkville, MS, US· patent location history
2016Based in El Dorado, AR, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GEN ELECTRIC | 22 | 2004–2019 |
| MATOCHA KEVIN SEANself | 6 | 2012–2019 |
| ARTHUR STEPHEN DALEY | 4 | 2013–2019 |
| HAWKINS WILLIAM GREGG | 2 | 2013–2019 |
| RAJAN SIDDHARTH | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Rexford, New York, US | 14 | 2006–2014 |
| Starkville, MS, US | 5 | 2013–2019 |
| Troy, New York, US | 3 | 2004–2006 |
| El Dorado, AR, US | 1 | 2016 |