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Inventor

Jongoh Kim

Inventor
Portland, OR, US

Overview

50→
Patents
2004–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 50 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10BElectronic memory devices6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
G11CStatic stores2%
H01FMagnets1%
H01QAntennas, i.e. radio aerials1%
H02JElectric power networks1%
H04BTransmission1%
PatentTitleYear
10,686,056Process method and structure for high voltage MOSFETs202010,297,594High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method201910,192,982Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact201910,115,814Process method and structure for high voltage MOSFETs20189,887,283'Process method and structure for high voltage MOSFETs'20189,876,096Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs20189,865,678'High voltage field balance metal oxide field effect transistor (FBM)'20189,818,829'Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs'20179,755,052'Process method and structure for high voltage MOSFETS'20179,748,375'Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact'20179,620,630'Injection control in semiconductor power devices'20179,595,587'Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs'20179,484,453'Device structure and methods of making high density MOSFETs for load switch and DC-DC applications'20169,484,452'Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs'20169,450,088'High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices'20169,450,083'High voltage field balance metal oxide field effect transistor (FBM)'20169,401,409'High density MOSFET array with self-aligned contacts enhancement plug and method'20169,356,022'Semiconductor device with termination structure for power MOSFET applications'20169,356,132'Integrating Schottky diode into power MOSFET'20169,318,587'Injection control in semiconductor power devices'20169,281,394'Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact'20169,281,416'Trench MOSFET with integrated Schottky barrier diode'20169,252,265'Shielded gate trench MOS with improved source pickup layout'20169,196,701'High density MOSFET array with self-aligned contacts enhancement plug and method'20159,190,512'High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices'20159,136,377'High density MOSFET array with self-aligned contacts delimited by nitride-capped trench gate stacks and method'20159,136,380'Device structure and methods of making high density MOSFETs for load switch and DC-DC applications'20159,129,822'High voltage field balance metal oxide field effect transistor (FBM)'20159,105,494'Termination trench for power MOSFET applications'20158,995,910'Antenna and mobile terminal having the same'20158,994,101'Shielded gate trench MOS with improved source pickup layout'20158,951,867'High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices'20158,865,540'Method for forming a schottky barrier diode integrated with a trench MOSFET'20148,809,948'Device structure and methods of making high density MOSFETs for load switch and DC-DC applications'20148,803,251'Termination of high voltage (HV) devices with new configurations and methods'20148,785,279'High voltage field balance metal oxide field effect transistor (FBM)'20148,785,270'Integrating schottky diode into power MOSFET'20148,785,278'Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact'20148,610,235'Trench MOSFET with integrated Schottky barrier diode'20138,502,302'Integrating Schottky diode into power MOSFET'20138,431,457'Method for fabricating a shielded gate trench MOS with improved source pickup layout'20138,076,708'Structures for and method of silicide formation on memory array and peripheral logic devices'20118,045,390'Memory system with dynamic reference cell and method of operating the same'20117,881,121'Decoding method in an NROM flash memory array'20117,517,737'Structures for and method of silicide formation on memory array and peripheral logic devices'20097,408,220'Non-volatile memory and fabricating method thereof'20087,344,938'Method of fabricating memory'20087,229,876'Method of fabricating memory'20077,157,333'Non-volatile memory and fabricating method thereof'20076,765,259'Non-volatile memory transistor array implementing H shaped source/drain regions and method for fabricating same'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2011Patents assigned to MACRONIX INT CO LTD (8)· patent assignee history
2007–2011Based in Hsinchu, TW· patent location history
2011–2018Patents assigned to KIM JONGOH (11)· patent assignee history
2013–2020Patents assigned to ALPHA & OMEGA SEMICONDUCTOR (40)· patent assignee history
2013–2018Patents assigned to CHANG HONG (6)· patent assignee history
2013–2018Patents assigned to CHEN JOHN (5)· patent assignee history
2013–2019Based in Suwon-si, KR· patent location history
2013–2016Based in Cupertino, CA, US· patent location history
2014–2020Based in Portland, OR, US· patent location history
2017–2018Based in Sunnyvale, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ALPHA & OMEGA SEMICONDUCTOR402013–2020
KIM JONGOHself112011–2018
MACRONIX INT CO LTD82007–2011
CHANG HONG62013–2018
CHEN JOHN52013–2018
Locations
LocationPatentsSpan
Portland, OR, US252014–2020
Suwon-si, KR82013–2019
Hsinchu, TW82007–2011
Cupertino, California, US52013–2016
Sunnyvale, California, US22017–2018