Inventor
Ashish Tandon
Inventor
Sunnyvale, CA, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light30%
B82YSpecific uses or applications of nanostructures25%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
C30BSingle-crystal growth5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
C23CCoating metallic material3%
F01NGas-flow silencers or exhaust apparatus for machines or engines in general3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
10,947,889Exhaust gas aftertreatment module support assembly20218,461,061'Quartz boat method and apparatus for thin film thermal treatment'20138,398,772'Method and structure for processing thin film PV cells with improved temperature uniformity'20137,577,172'Active region of a light emitting device optimized for increased modulation speed operation'20097,443,561'Deep quantum well electro-absorption modulator'20087,358,523'Method and structure for deep well structures for long wavelength active regions'20087,269,196'Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof'20077,142,342'Electroabsorption modulator'20067,034,331'Material systems for semiconductor tunnel-junction structures'20067,033,938'Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region'20067,016,392'GaAs-based long-wavelength laser incorporating tunnel junction structure'20066,876,686'Method of fabricating active layers in a laser utilizing InP-based active regions'20056,765,238'Material systems for semiconductor tunnel-junction structures'20046,756,325'Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region'20046,730,944'InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP'20046,711,195'Long-wavelength photonic device with GaAsSb quantum-well layer'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2009Patents assigned to AGILENT TECHNOLOGIES INC (7)· patent assignee history
2004–2013Based in Sunnyvale, CA, US· patent location history
2006–2013Patents assigned to TANDON ASHISH (4)· patent assignee history
2006–2008Patents assigned to AVAGO TECH FIBER IP SG PTE LTD (3)· patent assignee history
2006Patents assigned to CHANG YING-LAN (2)· patent assignee history
2006Based in Palo Alto, CA, US· patent location history
2013Patents assigned to ALEXANDER PAUL (2)· patent assignee history
2021Based in Greenwood, IN, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AGILENT TECHNOLOGIES INC | 7 | 2004–2009 |
| TANDON ASHISHself | 4 | 2006–2013 |
| AVAGO TECH FIBER IP SG PTE LTD | 3 | 2006–2008 |
| ALEXANDER PAUL | 2 | 2013 |
| CHANG YING-LAN | 2 | 2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sunnyvale, California, US | 14 | 2004–2013 |
| Greenwood, IN, US | 1 | 2021 |
| Palo Alto, California, US | 1 | 2006 |