Inventor

Jyrki Kaitila

Inventor
Helsinki, FI

Overview

22→
Patents
2002–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H03Hprimary
H03HImpedance networks, e.g. resonant circuits61%
Y10TTechnical subjects covered by former us classification22%
C23CCoating metallic material6%
H01LSemiconductor devices3%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
9,679,765'Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation'20179,048,812'Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer'20158,673,121'Method of fabricating piezoelectric materials with opposite C-axis orientations'20148,330,325'Bulk acoustic resonator comprising non-piezoelectric layer'20128,018,303'Bulk acoustic wave device'20117,977,850'Bulk acoustic wave device with a semiconductor layer'20117,825,747'Thin-film BAW filter, and a method for production of a thin-film BAW filter'20107,825,749'Integrated coupled resonator filter and bulk acoustic wave devices'20107,786,826'Apparatus with acoustically coupled BAW resonators and a method for matching impedances'20107,786,825'Bulk acoustic wave device with coupled resonators'20107,515,018'Acoustic resonator'20096,933,807'Acoustic reflector for a BAW resonator providing specified reflection of both shear waves and longitudinal waves'20056,812,619'Resonator structure and a filter comprising such a resonator structure'20046,788,170'Resonator structure having a dampening material and a filter having such a resonator structure'20046,548,943'Method of producing thin-film bulk acoustic wave devices'20036,509,813'Bulk acoustic wave resonator with a conductive mirror'20036,496,085'Solidly mounted multi-resonator bulk acoustic wave filter with a patterned acoustic mirror'20026,480,074'Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity'20026,462,460'Method and system for wafer-level tuning of bulk acoustic wave resonators and filters'20026,456,173'Method and system for wafer-level tuning of bulk acoustic wave resonators and filters'20026,441,702'Method and system for wafer-level tuning of bulk acoustic wave resonators and filters'20026,407,649'Monolithic FBAR duplexer and method of making the same'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2003Patents assigned to NOKIA MOBILE PHONES LTD (6)· patent assignee history
2002–2004Patents assigned to NOKIA CORP (4)· patent assignee history
2002–2010Based in Helsinki, FI· patent location history
2009–2015Patents assigned to KAITILA JYRKI (4)· patent assignee history
2009Based in Neubiberg, DE· patent location history
2010–2012Patents assigned to AVAGO TECHNOLOGIES WIRELESS IP (7)· patent assignee history
2010–2017Based in Riemerling, DE· patent location history
2014–2017Patents assigned to AVAGO TECHNOLOGIES GENERAL IP (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
AVAGO TECHNOLOGIES WIRELESS IP72010–2012
NOKIA MOBILE PHONES LTD62002–2003
KAITILA JYRKIself42009–2015
NOKIA CORP42002–2004
AVAGO TECHNOLOGIES GENERAL IP32014–2017
Locations
LocationPatentsSpan
Helsinki, FI122002–2010
Riemerling, DE92010–2017
Neubiberg, DE12009