Inventor
Akihiro Jonishi
Inventor
Matsumoto, JP
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices25%
H03KPulse technique21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
PatentTitleYear
10,396,775Semiconductor device for high-voltage circuit201910,121,783Semiconductor integrated circuit and semiconductor module20189,793,886'Semiconductor device for high-voltage circuit'20179,548,299'Semiconductor device'20179,293,525'Semiconductor device and method of manufacturing semiconductor device'20169,252,144'Field effect transistor and a device element formed on the same substrate'20168,928,368'Gate driving circuit'20158,791,511'Semiconductor device and manufacturing method thereof'20148,742,802'Gate driving circuit'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2019Patents assigned to FUJI ELECTRIC CO LTD (9)· patent assignee history
2014Patents assigned to JONISHI AKIHIRO (1)· patent assignee history
2014Patents assigned to SUMIDA HITOSHI (1)· patent assignee history
2014–2019Based in Matsumoto, JP· patent location history
2018Based in Blacksburg, VA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJI ELECTRIC CO LTD | 9 | 2014–2019 |
| JONISHI AKIHIROself | 1 | 2014 |
| SUMIDA HITOSHI | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Matsumoto, JP | 8 | 2014–2019 |
| Blacksburg, Virginia, US | 1 | 2018 |