LexDanaLexDanabeta
Inventor

Hiromi Fuke

Inventor
Kawasaki, JP

Overview

42→
Patents
1995–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 42 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer19%
B82YSpecific uses or applications of nanostructures18%
H01FMagnets16%
H10NElectric solid-state devices not otherwise provided for13%
Y10TTechnical subjects covered by former us classification12%
G01RMeasuring electric variables8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
G11CStatic stores3%
H10BElectronic memory devices3%
C23CCoating metallic material1%
PatentTitleYear
8,929,035'Tunnel barrier sensor with multilayer structure'20158,363,362'Magnetoresistive element'20138,331,062'Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory'20128,274,765'Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus'20128,259,419'Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen'20128,049,999'Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen'20118,031,443'Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element'20117,843,669'Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory'20107,738,220'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20107,719,800'Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same'20107,593,195'Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory'20097,505,234'Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory'20097,476,414'Magnetoresistance effect element'20097,375,405'Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element'20087,301,733'Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory'20077,289,305'Magnetoresistive element, magnetic head, and magnetic recording and reproducing apparatus'20077,248,448'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20077,130,163'Magnetoresistance effect element'20067,008,702'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20066,853,520'Magnetoresistance effect element'20056,816,347'Magnetoresistive element and magnetic recording apparatus'20046,690,553'Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus'20046,636,399'Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus'20036,483,673'Differential detection magnetoresistance head with laminated structure'20026,455,178'Exchange coupling film and magnetoresistive element'20026,395,388'Magnetoresistance effect element'20026,368,706'Magnetoresistance effect element'20026,338,899'Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system'20026,313,973'Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same'20016,165,607'Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using the same'20006,159,593'Magnetoresistance effect element'20006,088,195'Magnetoresistance effect element'20006,057,049'Exchange coupling film and magnetoresistive element'20005,999,378'Magnetoresistance effect head having a giant magnetoresistance effect film'19995,976,713'Exchange-coupling film and, magneto-resistance effect element and magnetic head using thereof'19995,828,525'Differential detection magnetoresistance head'19985,796,560'Magnetoresistive head'19985,780,176'Magnetoresistance effect element'19985,756,191'Exchange coupling film and magnetoresistance effect element'19985,750,273'Soft magnetic thin film and thin film magnetic element using the same'19985,522,946'Amorphous magnetic thin film and plane magnetic element using same'19965,387,551'Method of manufacturing flat inductance element'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2015Patents assigned to TOSHIBA KK (39)· patent assignee history
1995–2012Based in Kawasaki, JP· patent location history
1996–2015Based in Kanagawa, JP· patent location history
1999–2012Patents assigned to TDK CORP (4)· patent assignee history
2010–2013Based in Yokohama, JP· patent location history
2012–2015Patents assigned to FUKE HIROMI (5)· patent assignee history
2012–2015Patents assigned to IWASAKI HITOSHI (5)· patent assignee history
2012–2013Patents assigned to HASHIMOTO SUSUMU (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK391995–2015
FUKE HIROMIself52012–2015
IWASAKI HITOSHI52012–2015
TDK CORP41999–2012
HASHIMOTO SUSUMU32012–2013
Locations
LocationPatentsSpan
Kawasaki, JP261995–2012
Kanagawa, JP111996–2015
Yokohama, JP52010–2013