LexDanaLexDanabeta
Inventor

Hiroyuki Ohta

Inventor
Tsuchiura, JP

Overview

141→
Patents
1978–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 141 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10TTechnical subjects covered by former us classification7%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure7%
H10BElectronic memory devices6%
G01BMeasuring length, thickness or similar linear dimensions5%
G11BInformation storage based on relative movement between record carrier and transducer4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H05KPrinted circuits2%
PatentTitleYear
9,786,565'Semiconductor device and method of manufacturing the semiconductor device'20179,709,377'Strain sensor chip mounting structure, strain sensor chip and method of manufacturing a strain sensor chip mounting structure'20179,581,427'Mechanical quantity measuring device'20179,103,049'Method for melting semiconductor wafer raw material and crystal growing method for semiconductor wafer'2015D0721349'Communication apparatus'20158,695,433'Mechanical-quantity measuring device'20148,518,785'Semiconductor device and method of manufacturing the same'2013D0685908'Endoscope'20138,481,383'Method of forming semiconductor device having buffer layer between sidewall insulating film and semiconductor substrate'20138,365,609'Mechanical-quantity measuring device'2013D0674370'Voice recording/reproducing device'20138,324,040'Semiconductor device and method for fabricating the same'20128,288,757'Semiconductor device and manufacturing method thereof'20128,278,177'Semiconductor device and method of manufacturing the same'20128,258,576'Method of manufacturing a semiconductor device including epitaxially growing semiconductor epitaxial layers on a surface of semiconductor substrate'20128,207,042'Semiconductor device and method of manufacturing the same'20128,186,228'Strain measuring device'20128,183,681'Semiconductor device'20128,164,085'Semiconductor device and production method thereof'20128,146,443'Rotating body dynamic quantity measuring device and system'20128,056,421'Apparatus for measuring a mechanical quantity'20117,992,448'Mechanical-quantity measuring device'20117,977,194'Method for fabricating semiconductor device with fully silicided gate electrode'20117,968,414'Semiconductor device and production method thereof'20117,906,848'Semiconductor device'20117,906,798'Semiconductor device having buffer layer between sidewall insulating film and semiconductor substrate'20117,893,810'Strain measuring device'20117,875,521'Semiconductor device and production method thereof'20117,836,755'Solidification sensor'20107,838,401'Semiconductor device and manufacturing method thereof'20107,793,551'Load sensor with shock relaxation material to protect semiconductor strain sensor'20107,770,462'Apparatus for measuring a mechanical quantity'20107,759,215'Semiconductor device having STI without divot and its manufacture'20107,721,610'Rotating body dynamic quantity measuring device and system'20107,707,894'Apparatus for measuring a mechanical quantity'20107,683,362'Semiconductor device and production method thereof'20107,678,711'Semiconductor device, and method and apparatus for manufacturing the same'20107,678,641'Semiconductor device and fabrication process thereof'2010D0611083'Digital camera'20107,663,187'Semiconductor device and method of fabricating the same'2010D0610182'Digital camera'20107,626,215'Semiconductor device and method of manufacturing the same'20097,601,996'Semiconductor device and manufacturing method thereof'20097,592,214'Method of manufacturing a semiconductor device including epitaxially growing semiconductor epitaxial layers on a surface of semiconductor substrate'20097,589,391'Semiconductor device with STI and its manufacture'20097,585,739'Semiconductor device and method of fabricating the same'20097,584,668'Monitoring system for valve device'20097,579,617'Semiconductor device and production method thereof'20097,518,202'Mechanical quantity measuring apparatus'20097,484,422'Mechanical-quantity measuring device'20097,459,786'Semiconductor device'20087,442,593'Method of manufacturing semiconductor device having conductive thin films'20087,430,920'Apparatus for measuring a mechanical quantity'20087,430,921'Apparatus for measuring a mechanical quantity'20087,378,305'Semiconductor integrated circuit and fabrication process thereof'20087,321,151'Semiconductor device and method of fabricating the same'20087,293,466'Bolt with function of measuring strain'20077,279,769'Semiconductor device and manufacturing method thereof'20077,252,010'Pressure sensor system with semiconductor chip and antenna member'20077,244,643'Semiconductor device and manufacturing method thereof'20077,223,664'Semiconductor device and method for fabricating the same'20077,208,812'Semiconductor device having STI without divot and its manufacture'20077,205,617'Semiconductor device including active regions and gate electrodes for field effect transistors, with a trench formed between the active regions'20077,196,396'Semiconductor device having STI without divot and its manufacture'20077,196,395'Semiconductor device and manufacturing method'20077,193,270'Semiconductor device with a vertical transistor'20077,186,632'Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon'20077,119,428'Semiconductor device'20067,109,568'Semiconductor device including n-channel fets and p-channel fets with improved drain current characteristics'20067,091,520'Method of manufacturing semiconductor device having conductive thin films'20067,084,477'Semiconductor device and manufacturing method of the same'20067,064,437'Semiconductor device having aluminum conductors'20067,037,803'Manufacture of semiconductor device having STI and semiconductor device manufactured'20067,037,413'Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information'20067,009,279'Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof'20066,982,465'Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics'20066,965,140'Semiconductor device including storage capacitor'20056,960,832'Semiconductor device and its production process'20056,943,076'Semiconductor device and method of manufacturing the same'20056,933,031'Optical information recording medium and its manufacturing method'20056,927,439'Semiconductor memory with strongly adhesive electrode'20056,891,761'Semiconductor device and manufacturing method'20056,856,021'Semiconductor device having aluminum alloy conductors'20056,842,123'Electromechanical switching device and emergency shut-off and communication system utilizing same'20056,821,707'Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information'20046,784,549'Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum'20046,781,172'Semiconductor device with adhesion-improvement capacitor and process for producing the device'20046,720,603'CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER'20046,710,610'Socket for testing of semiconductor device, and semiconductor device and method of manufacturing the semiconductor device'20046,690,071'Semiconductor device using junction leak current'20046,686,274'Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process'20046,639,263'Semiconductor device with copper wiring connected to storage capacitor'20036,617,691'Semiconductor device'20036,573,112'Semiconductor device manufacturing method'20036,566,149'Method for manufacturing substrate for inspecting semiconductor device'20036,554,194'IC card and its manufacturing method'20036,548,904'Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum'20036,544,884'Semiconductor device and method of fabricating same'20036,534,375'METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS'20036,521,932'Semiconductor device with copper wiring connected to storage capacitor'20036,479,305'Semiconductor device manufacturing method'20026,476,492'Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten'20026,472,754'Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector'20026,468,845'Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor'20026,412,187'Analog quantity display method, analog quantity measuring method, and digital/analog display type measuring instrument'20026,379,998'Semiconductor device and method for fabricating the same'20026,380,014'Manufacture method of semiconductor device with suppressed impurity diffusion from gate electrode'20026,346,731'Semiconductor apparatus having conductive thin films'20026,337,517'Semiconductor device and method of fabricating same'20026,326,284'Semiconductor device and production thereof'20016,319,580'Recording disk and producing method therefor'20016,268,295'Method of manufacturing semiconductor device'20016,268,034'Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus'20016,143,469'Optical information recording medium and manufacturing method'20006,121,113'Method for production of semiconductor device'20006,118,140'Semiconductor apparatus having conductive thin films'20006,043,142'Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor'20006,017,784'Manufacture method of semiconductor device with suppressed impurity diffusion from gate electrode'20005,989,654'Method for manufacturing an optical information recording medium'19995,962,535'Composition for alzheimer\'s disease'19995,914,214'Method for manufacturing an optical information recording medium'19995,909,052'Semiconductor device having plural chips with the sides of the chips in face-to-face contact with each other in the same crystal plane'19995,815,819'Intermittent reception control apparatus'19985,683,515'Apparatus for manufacturing a semiconductor device having conductive then films'19975,660,519'Method for mounting components and an apparatus therefor'19975,643,805'Process for producing a bipolar device'19975,619,069'Bipolar device and production thereof'19975,535,272'Sensor circuit for a telephone line'19965,525,551'Method for forming insulating film in semiconductor device using a TEOS or HMDS pre-treatment'19965,491,888'Method for mounting component chips and an apparatus therefor'19965,479,499'Sensor circuit for voice/fax switch with cascaded amplifier circuit'19955,444,302'Semiconductor device including multi-layer conductive thin film of polycrystalline material'19955,384,956'Method for mounting components'19955,377,405'Method for mounting components and an apparatus therefor'19955,311,587'Sensor circuit for telephone line'19945,229,643'Semiconductor apparatus and semiconductor package'19935,144,741'Method of manufacturing a magnetic head with two canted gaps'19925,084,797'Magnetic head with two canted gaps and the manufacturing method thereof'19924,822,441'Plastic mold decapsuling apparatus'19894,510,543'Magnetic head system for tape player'19854,078,461'Trimming press having die movable to inactive position to facilitate scrap removal'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2017Based in Tokyo, JP· patent location history
1993–2017Patents assigned to HITACHI LTD (55)· patent assignee history
1993–2008Based in Ibaraki, JP· patent location history
1996–2008Patents assigned to FUJITSU LTD (12)· patent assignee history
1996–2013Based in Kawasaki, JP· patent location history
1999–2006Based in Osaka, JP· patent location history
2001–2014Based in Tsuchiura, JP· patent location history
2004–2008Patents assigned to RENESAS TECH CORP (13)· patent assignee history
2010–2017Patents assigned to FUJITSU SEMICONDUCTOR LTD (15)· patent assignee history
2011–2017Patents assigned to OHTA HIROYUKI (18)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD551993–2017
OHTA HIROYUKIself182011–2017
FUJITSU SEMICONDUCTOR LTD152010–2017
RENESAS TECH CORP132004–2008
FUJITSU LTD121996–2008
Locations
LocationPatentsSpan
Tsuchiura, JP572001–2014
Kawasaki, JP331996–2013
Ibaraki, JP131993–2008
Osaka, JP81999–2006
Tokyo, JP51989–2017