Inventor
Shou-Wei Hsieh
Inventor
Hsinchu, TW
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H10BElectronic memory devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems2%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers2%
PatentTitleYear
10,692,780Method for protecting epitaxial layer by forming a buffer layer on NMOS region202010,566,327Method for enlarging tip portion of a fin-shaped structure202010,522,660Method for fabricating semiconductor device201910,483,395Method for fabricating semiconductor device201910,446,448Semiconductor device and method for fabricating the same201910,347,761Tunneling field effect transistor and method for fabricating the same201910,340,272Manufacturing method of semiconductor device201910,256,160Method for protecting epitaxial layer by forming a buffer layer on NMOS region201910,211,311Method for fabricating semiconductor device201910,153,210Semiconductor device and method for fabricating the same201810,141,228FinFET device having single diffusion break structure201810,008,578Semiconductor device and method for fabricating the same20189,972,623Semiconductor device including barrier layer and manufacturing method thereof20189,953,880Semiconductor device and method for fabricating the same20189,627,268'Method for fabricating semiconductor device'20178,981,501'Semiconductor device and method of forming the same'20157,368,782'Dual-bit non-volatile memory cell and method of making the same'20087,071,063'Dual-bit non-volatile memory cell and method of making the same'20066,518,137'Method for forming steep spacer in a MOS device'20036,207,501'Method of fabricating a flash memory'20016,010,925'Method of making dual-gate CMOSFET'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000Patents assigned to UTEK SEMICONDUCTOR CORP (1)· patent assignee history
2000–2020Based in Hsinchu, TW· patent location history
2001–2020Patents assigned to UNITED MICROELECTRONICS CORP (20)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 20 | 2001–2020 |
| UTEK SEMICONDUCTOR CORP | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 21 | 2000–2020 |