Inventor
Schang-Jing Hon
Inventor
Hsinchu, TW
Overview
Patents· 63 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers36%
H01LSemiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
LOC135%
H05BElectric heating4%
H10DInorganic electric semiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications4%
LOC262%
F21KNon-electric light sources using luminescence1%
PatentTitleYear
10,964,847Light-emitting element202110,950,652Light-emitting structure having a plurality of light-emitting structure units202110,559,717Light-emitting device and manufacturing method thereof202010,546,824Light-emitting device202010,529,895Optoelectronic semiconductor device202010,374,130Light-emitting element with electrode structure201910,153,398Light-emitting device and manufacturing method thereof201810,062,730Light-emitting structure201810,038,029Light-emitting device20189,893,024'Light emitting device'20189,876,146Optoelectronic semiconductor device20189,508,902'Optoelectronic semiconductor device'20169,461,208'Light-emitting element'20169,437,780'Optoelectronic semiconductor device'2016D0764422'Light-emitting diode'20169,406,719'Light-emitting structure'20169,385,108'Light-emitting device having optoelectronic elements on different elevations'20169,306,123'Light-emitting element'2016D0752249'Light emitting diode'20169,269,855'Method for manufacturing high efficiency light-emitting diodes'20169,232,586'Light-emitting device'20169,196,605'Light-emitting structure'2015D0743354'Light-emitting diode'20159,171,883'Light emitting device'20159,153,738'Light-emitting element'20159,142,534'Light-emitting device'20159,076,946'Light-emitting element'20159,000,457'Multi-dimensional light-emitting device'20158,928,026'Optoelectronic device and method for manufacturing the same'2015D0715970'Light emitting diode'20148,823,022'Light emitting device'20148,710,515'Light-emitting device'20148,704,252'Light emitting device'20148,686,462'Optoelectronic device'2014D0698743'Light-emitting diode'20148,623,682'Method for manufacturing high efficiency light-emitting diodes'20148,546,156'High efficiency light-emitting diode and method for manufacturing the same'20138,519,430'Optoelectronic device and method for manufacturing the same'2013D0688819'Light emitting diode'20138,486,742'Method for manufacturing high efficiency light-emitting diodes'2013D0684127'Light emitting diode'2013D0668232'Light emitting diode'20128,043,878'Method for manufacturing high efficiency light-emitting diodes'2011D0644187'Light emitting diode array'2011D0644188'Light emitting diode array'20117,811,838'High efficiency light-emitting diode and method for manufacturing the same'20107,675,077'Light-emitting diode and method for manufacturing the same'20107,453,098'Vertical electrode structure of gallium nitride based light emitting diode'20087,345,315'Gallium nitride based light-emitting device'20087,319,045'Gallium-nitride based light emitting diode structure and fabrication thereof'20087,285,800'Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency'20077,279,347'Method for manufacturing a light-emitting structure of a light-emitting device (LED)'20077,208,752'Structure and manufacturing of gallium nitride light emitting diode'20077,183,583'Gallium-nitride based light emitting diode structure and fabrication thereof'20077,154,163'Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers'20067,119,374'Gallium nitride based light emitting device and the fabricating method for the same'20067,001,824'Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structure'20066,992,331'Gallium nitride based compound semiconductor light-emitting device'20066,933,160'Method for manufacturing of a vertical light emitting device structure'20056,911,079'Method for reducing the resistivity of p-type II-VI and III-V semiconductors'20056,881,983'Efficient light emitting diodes and lasers'20056,812,502'Flip-chip light-emitting device'20046,492,661'Light emitting semiconductor device having reflection layer structure'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2008Patents assigned to SUPERNOVA OPTOELECTRONICS CORP (8)· patent assignee history
2005–2008Based in Pa-Te, TW· patent location history
2007–2008Based in Bade City, TW· patent location history
2010–2021Patents assigned to EPISTAR CORP (46)· patent assignee history
2010–2020Based in Tainan, TW· patent location history
2011–2021Based in Hsinchu, TW· patent location history
2011–2016Based in Taichung, TW· patent location history
2012–2016Patents assigned to HON SCHANG-JING (15)· patent assignee history
2012–2016Patents assigned to KO TSUN-KAI (9)· patent assignee history
2012–2016Patents assigned to SHEN CHIEN-FU (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| EPISTAR CORP | 46 | 2010–2021 |
| HON SCHANG-JINGself | 15 | 2012–2016 |
| KO TSUN-KAI | 9 | 2012–2016 |
| SHEN CHIEN-FU | 9 | 2012–2016 |
| SUPERNOVA OPTOELECTRONICS CORP | 8 | 2005–2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 34 | 2011–2021 |
| Pa-Te, TW | 10 | 2005–2008 |
| Tainan, TW | 7 | 2010–2020 |
| Taichung, TW | 6 | 2011–2016 |
| Bade City, TW | 2 | 2007–2008 |