Inventor
David W. Treat
Inventor
San Jose, CA, US
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light44%
B82YSpecific uses or applications of nanostructures32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
C30BSingle-crystal growth4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
7,596,161'Laterally oxidized vertical cavity surface emitting lasers'20097,160,749'Method and structure for eliminating polarization instability in laterally—oxidized VCSELs'20077,138,648'Ultraviolet group III-nitride-based quantum well laser diodes'20066,750,120'Method and apparatus for MOCVD growth of compounds including GaAsN alloys using an ammonia precursor with a catalyst'20046,621,844'Buried oxide photonic device with large contact and precise aperture'20036,304,588'Method and structure for eliminating polarization instability in laterally-oxidized VCSELs'20015,832,019'Index guided semiconductor laser biode with shallow selective IILD'19985,766,981'Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD'19985,412,678'Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers'19955,396,508'Polarization switchable quantum well laser'19955,379,312'Semiconductor laser with tensile-strained etch-stop layer'19954,962,057'Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2009Patents assigned to XEROX CORP (11)· patent assignee history
1990–2007Based in San Jose, CA, US· patent location history
2006Patents assigned to PALO ALTO RES CT INC (1)· patent assignee history
2009Based in San Antonio, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| XEROX CORP | 11 | 1990–2009 |
| PALO ALTO RES CT INC | 1 | 2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 11 | 1990–2007 |
| San Antonio, Texas, US | 1 | 2009 |