LexDanaLexDanabeta
Inventor

Toshihiko Yoshida

Inventor
Tenri, JP

Overview

81→
Patents
1977–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 81 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light20%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%
G02BOptical elements, systems or apparatus5%
H04NPictorial communication, e.g. television5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G11BInformation storage based on relative movement between record carrier and transducer4%
H10DInorganic electric semiconductor devices4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
G06FElectric digital data processing4%
PatentTitleYear
9,762,337'Communication apparatus and computer readable medium for executing application programs based on radio-wave intensity'20179,679,604'Playback speed adjustable apparatus for playback of moving picture'20179,681,379'Communication device for controlling communication through second communication system based on field intensity of received information of communication through first communication system and storage medium'20179,640,221'Information output device and computer readable medium'20179,502,201'Tungsten electrode material and thermionic emission current measuring device'20169,344,641'Photographing controller for controlling photographing executed by a plurality of cameras'20169,344,633'Imaging apparatus and imaging processing method capable of checking composition in advance, and storage medium therefor'20169,324,158'Image processing device for performing image processing on moving image'20169,276,443'Rotating element with embedded permanent magnet and rotating electrical machine'20169,083,225'Rotary electric machine'20158,440,365'Electrolyte, production process therefor, electrolyte membrane, production process therefor, catalyst layer and fuel cell'20138,314,864'Digital camera comprising smear removal function'20128,294,322'Rotating electrical machine'20128,168,349'Fuel cell-purpose electrolyte material and production method therefor'20127,733,393'Digital camera comprising smear removal function'20107,301,176'Semiconductor light emitting device and fabrication method thereof'20076,967,979'Semiconductor laser device, optical pickup and fabrication method of semiconductor laser device'20056,885,085'Semiconductor laser device'20056,818,436'Micro array chip'20046,784,464'Semiconductor laser device and wire bonding method capable of easily performing reliable wire bonding'20046,562,693'Semiconductor laser device and wire bonding method capable of easily performing reliable wire bonding'20035,892,494'Correction of LCD drive voltage in dependence upon LCD switching element turn on time between polarity changes'19995,863,303'Fuel oil composition for diesel engines'19995,852,302'Cylindrical multiple-pole mass filter with CVD-deposited electrode layers'19985,598,283'Short circuit line having a conductive extension between groups of terminals in a liquid crystal display device'19975,488,498'Liquid crystal display with particular contacts for supplying counter electrode potential'19965,450,237'Hyperresolution optical system'19955,416,340'Thin film transistor and active matrix liquid crystal display device having reduced photoelectric leakage current due to incident light'19955,337,173'Liquid crystal display having a redundant storage capacitor for connection to one of plural pixels'19945,224,195'Light wavelength converter for a wavelength of laser beams into a short wavelength'19935,219,770'Method for fabricating a MISFET including a common contact window'19935,144,636'Laser beam oscillating apparatus'19925,130,210'Stabilized zirconia solid electrolyte and process for preparation thereof'19925,119,355'Optical information processing apparatus'19925,109,462'Light wavelength converter'19925,101,297'Method for producing a diffraction grating in optical elements'19925,046,802'Light wavelength converter'19915,033,812'Grating coupler'19915,025,449'Optical pumping-type solid-state laser apparatus with a semiconductor laser device'19915,021,892'Image processing device of multifunctional type'19915,007,694'Light wavelength converter'19914,997,747'Method for the formation of a diffraction grating'19914,950,562'Solid electrolyte type fuel cells'19904,945,525'Optical information processing apparatus'19904,941,148'Semiconductor laser element with a single longitudinal oscillation mode'19904,928,163'Semiconductor device'19904,910,607'Image processing device of multifunctional type'19904,910,744'Buried heterostructure semiconductor laser device'19904,908,830'Buried type semiconductor laser device'19904,908,831'Buried type semiconductor laser device'19904,891,816'Integrated semiconductor laser device'19904,873,115'Method of sythesizing carbon film and carbon particles in a vapor phase'19894,862,472'Semiconductor laser device'19894,852,961'Nonlinear optical waveguide device including grating for changing of the wavelength of light'19894,852,116'Semiconductor laser device'19894,849,985'Distributed feedback semiconductor laser device'19894,841,534'Buried type semiconductor laser device'19894,839,900'Buried type semiconductor laser device'19894,820,019'Optical device'19894,819,240'Light modulator'19894,813,069'Computer system having automatic answering telephone function'19894,806,454'Method for the formation of a diffraction grating'19894,805,183'Distributed feedback semiconductor laser device'19894,803,690'Semiconductor laser'19894,799,227'Semiconductor laser device having a buried heterostructure'19894,771,434'Semiconductor laser device with an integrated light-detecting area'19884,745,615'Semiconductor laser device with a diffraction grating'19884,745,616'Semiconductor laser device with a diffraction grating'19884,738,729'Amorphous silicon semiconductor solar cell'19884,730,329'Semiconductor laser device'19884,726,851'Amorphous silicon semiconductor film and production process thereof'19884,716,570'Distributed feedback semiconductor laser device'19874,696,216'Acoustic output device for personal computer'19874,692,206'Method for producing a semiconductor laser device having a buried heterostructure'19874,661,815'Gate array integrated device having mixed single column type and matrix type arrays'19874,598,304'Thin film devices of silicon'19864,490,208'Method of producing thin films of silicon'1984D0261266'Vacuum cleaner'1981D0259882'Vacuum cleaner'1981D0247117'Vacuum cleaner'1978D0246107'Vacuum cleaner'1977

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1977–1981Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (4)· patent assignee history
1987–2007Patents assigned to SHARP KK (44)· patent assignee history
1987–1992Based in Tenri, JP· patent location history
1987–2007Based in Nara, JP· patent location history
1987–1999Based in Yokohama, JP· patent location history
1988–2016Patents assigned to YOSHIDA TOSHIHIKO (8)· patent assignee history
1988–1999Based in Saitama, JP· patent location history
1994–1999Patents assigned to IBM (5)· patent assignee history
2010–2017Patents assigned to CASIO COMPUTER CO LTD (9)· patent assignee history
2010–2017Based in Fussa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP KK441987–2007
CASIO COMPUTER CO LTD92010–2017
YOSHIDA TOSHIHIKOself81988–2016
IBM51994–1999
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD41977–1981
Locations
LocationPatentsSpan
Tenri, JP261987–1992
Nara, JP181987–2007
Fussa, JP82010–2017
Yokohama, JP81987–1999
Saitama, JP51988–1999