Inventor

Kai Zhao

Inventor
Hopewell Junction, NY, US

Overview

18→
Patents
2012–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices17%
H10DInorganic electric semiconductor devices17%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G06FElectric digital data processing4%
H04MTelephonic communication4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
A01DHarvesting2%
PatentTitleYear
11,109,533Feeder housing for agricultural machine202111,071,061Communication system, gateway, terminal and communication method based on LoRa technology202111,059,396Diving cushion for a reversible seat202110,361,132Structures with thinned dielectric material201910,354,999Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate201910,313,498Electronic device20199,818,746'Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate'20179,620,384'Control of O-ingress into gate stack dielectric layer using oxygen permeable layer'20179,461,149'Nanowire structure with selected stack removed for reduced gate resistance and method of fabricating same'20169,287,185'Determining appropriateness of sampling integrated circuit test data in the presence of manufacturing variations'20169,269,786'Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors'20169,110,777'Reducing performance degradation in backup semiconductor chips'20158,755,018'Liquid crystal display mother panel comprising primary spacers and secondary spacers wherein the primary spacers are surrounded by a primary sealant element'20148,637,875'Single photon IR detectors and their integration with silicon detectors'20148,558,982'Liquid crystal display panel and manufacturing method thereof'20138,274,072'Ultrathin spacer formation for carbon-based FET'20128,264,658'Liquid crystal display device and method of manufacturing color filter substrate'20128,193,032'Ultrathin spacer formation for carbon-based FET'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2012–2015Patents assigned to ZHAO KAI (7)· patent assignee history
2012–2019Patents assigned to IBM (6)· patent assignee history
2012–2014Patents assigned to BEIJING BOE OPTOELECTRONICS (3)· patent assignee history
2012–2021Based in Beijing, CN· patent location history
2012–2014Based in Fishkill, NY, US· patent location history
2015–2019Based in Hopewell Junction, NY, US· patent location history
2016–2019Patents assigned to GLOBALFOUNDRIES INC (5)· patent assignee history
2019–2021Patents assigned to BOE TECHNOLOGY GROUP CO LTD (2)· patent assignee history
2021Based in Burr Ridge, IL, US· patent location history
2021Based in Rochester Hills, MI, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ZHAO KAIself72012–2015
IBM62012–2019
GLOBALFOUNDRIES INC52016–2019
BEIJING BOE OPTOELECTRONICS32012–2014
BOE TECHNOLOGY GROUP CO LTD22019–2021
Locations
LocationPatentsSpan
Hopewell Junction, New York, US72015–2019
Beijing, CN52012–2021
Fishkill, New York, US32012–2014
Burr Ridge, Illinois, US12021
Rochester Hills, MI, US12021