Inventor
Mingjiao Liu
Inventor
Gilbert, AZ, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices41%
H01LSemiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H03HImpedance networks, e.g. resonant circuits4%
H10NElectric solid-state devices not otherwise provided for4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
PatentTitleYear
11,056,581Trench-gate insulated-gate bipolar transistors202110,727,326Trench-gate insulated-gate bipolar transistors (IGBTs)202010,438,932Semiconductor device and method of integrating power module with interposer and opposing substrates201910,388,539Semiconductor component and method of manufacture201910,177,232Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profiles201910,163,764Semiconductor component and method of manufacture20189,972,607Semiconductor device and method of integrating power module with interposer and opposing substrates20189,818,677'Semiconductor component having group III nitride semiconductor device mounted on substrate and interconnected to lead frame'20179,780,019'Semiconductor component and method of manufacture'20179,716,151'Schottky device having conductive trenches and a multi-concentration doping profile therebetween'20178,339,758'Transient voltage suppressor and method'20128,309,422'Low clamp voltage ESD method'20128,236,625'Method of forming a multi-channel ESD device'20128,188,572'Integrated semiconductor device'20128,110,448'Two terminal multi-channel ESD device and method therefor'20128,093,133'Transient voltage suppressor and methods'20128,089,095'Two terminal multi-channel ESD device and method therefor'20128,039,359'Method of forming low capacitance ESD device and structure therefor'20117,955,941'Method of forming an integrated semiconductor device and structure therefor'20117,842,969'Low clamp voltage ESD device and method therefor'20107,812,367'Two terminal low capacitance multi-channel ESD device'20107,579,632'Multi-channel ESD device and method therefor'20097,538,395'Method of forming low capacitance ESD device and structure therefor'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2012Patents assigned to SEMICONDUCTOR COMPONENTS IND (13)· patent assignee history
2009–2021Based in Gilbert, AZ, US· patent location history
2012Patents assigned to LIU MINGJIAO (7)· patent assignee history
2012Patents assigned to SALIH ALI (7)· patent assignee history
2012Patents assigned to MARREIRO DAVID D (2)· patent assignee history
2017–2021Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (10)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR COMPONENTS IND | 13 | 2009–2012 |
| SEMICONDUCTOR COMPONENTS IND LLC | 10 | 2017–2021 |
| LIU MINGJIAOself | 7 | 2012 |
| SALIH ALI | 7 | 2012 |
| MARREIRO DAVID D | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gilbert, AZ, US | 23 | 2009–2021 |