Inventor
Yukio Shakuda
Inventor
Kyoto, JP
Overview
Patents· 63 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers50%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B82YSpecific uses or applications of nanostructures3%
G11CStatic stores2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
B41JTypewriters1%
C30BSingle-crystal growth1%
F21KNon-electric light sources using luminescence1%
PatentTitleYear
8,934,513'Semiconductor light emitting device and manufacturing method therefor'20158,709,843'Method of manufacturing nitride semiconductor and nitride semiconductor element'20148,421,119'GaN related compound semiconductor element and process for producing the same and device having the same'20138,411,718'Semiconductor light-emitting device'20138,399,895'Semiconductor light emitting device'20138,101,963'Semiconductor light emitting element and method for manufacturing same'20128,097,532'Method for manufacturing a semiconductor light emitting device'20128,030,669'Semiconductor light emitting device'20117,977,703'Nitride semiconductor device having a zinc-based substrate'20117,973,321'Nitride semiconductor light emitting device having ridge parts'20117,939,833'Nitride semiconductor light emitting device'20117,902,770'Light emitting device'20117,899,101'Semiconductor light emitting device and manufacturing method therefor'20117,847,305'Semiconductor light emitting device'20107,616,672'Semiconductor light emitting device and manufacturing method therefor'20097,592,633'Semiconductor light emitting device'20097,501,662'Semiconductor light emitting element array illuminator using the same'20097,154,127'Semiconductor light emitting device'20067,112,825'Semiconductor light emitting device'20067,071,015'Semiconductor light emitting device and method for producing the same'20067,034,342'Semiconductor light emitting device'20067,019,323'Semiconductor light emitting device'20066,996,150'Semiconductor light emitting device and manufacturing method therefor'20066,855,962'Semiconductor light emitting device'20056,680,492'Semiconductor light emitting device and method for producing the same'20046,426,518'Semiconductor light emitting device'20026,376,866'GaN semiconductor light emitting device having a group II-VI substrate'20026,329,216'Method of manufacturing an AlGaInP light emitting device using auto-doping'20016,298,079'Gallium nitride type laser for emitting blue light'20016,274,891'Semiconductor laser'20016,258,619'Fabrication of semiconductor light emitting device'20016,238,947'Semiconductor light-emitting device and method of fabricating the same'20016,236,067'Semiconductor light emitting device using an AlGaInP group or AlGaAs group material'20016,194,241'Semiconductor light emitting device and method of manufacturing the same'20016,168,962'Method of manufacturing a semiconductor light emitting device'20016,163,037'Double heterojunction light emitting device possessing a dopant gradient across the N-type layer'20006,156,584'Method of manufacturing a semiconductor light emitting device'20006,121,656'Semiconductor memory device mounted with a light emitting device'20006,115,399'Semiconductor light emitting device'20006,107,647'Semiconductor AlGaInP light emitting device'20006,107,644'Semiconductor light emitting device'20006,107,648'Semiconductor light emitting device having a structure which relieves lattice mismatch'20006,087,681'GaN semiconductor light emitting device having a group III-V substrate'20006,084,899'Semiconductor light emitting device and manufacturing method'20006,072,819'Semiconductor light-emitting device and method of fabricating the same'20006,060,727'Light emitting semiconductor device'20005,981,978'Superluminescent diode and method for manufacturing the same'19995,974,069'Semiconductor laser and manufacturing method thereof'19995,940,684'Method and equipment for manufacturing semiconductor device'19995,939,735'Semiconductor light emitting device'19995,838,029'GaN-type light emitting device formed on a silicon substrate'19985,825,052'Semiconductor light emmitting device'19985,814,533'Semiconductor light emitting element and manufacturing method therefor'19985,793,405'LED printhead, LED array chip therefor and method of making LED array chip'19985,760,439'Semiconductor memory device'19985,751,752'Semiconductor light emitting device and manufacturing method therefor'19985,583,880'Semiconductor laser'19965,574,304'Superluminescent diode with offset current injection regions'19965,557,115'Light emitting semiconductor device with sub-mount'19965,548,127'Semiconductor light emitting device and its manufacturing method'19965,521,396'Semiconductor light emitting device'19965,477,063'Semiconductor light emitting device with Group II-IV and III-V semiconductors'19955,394,421'Semiconductor laser device including a step electrode in a form of eaves'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2015Patents assigned to ROHM CO LTD (62)· patent assignee history
1995–2015Based in Kyoto, JP· patent location history
2001Patents assigned to ROHM LTD (1)· patent assignee history
2012–2015Patents assigned to SHAKUDA YUKIO (7)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ROHM CO LTD | 62 | 1995–2015 |
| SHAKUDA YUKIOself | 7 | 2012–2015 |
| ROHM LTD | 1 | 2001 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 63 | 1995–2015 |