Inventor
Jun-Nan Nian
Inventor
Tainan, TW
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H01LSemiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C25DProcesses for the electrolytic or electrophoretic production of coatings13%
H10DInorganic electric semiconductor devices13%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form5%
H01RElectrically-conductive connections5%
H02GInstallation of electric cables or lines, or of combined optical and electric cables or lines5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
PatentTitleYear
11,133,395N-work function metal with crystal structure202111,015,260Method for controlling electrochemical deposition to avoid defects in interconnect structures202110,879,629Method of electroplating metal into recessed feature and electroplating layer in recessed feature202010,840,184Formation of copper layer structure with self anneal strain improvement202010,749,278Method of electroplating metal into recessed feature and electroplating layer in recessed feature202010,269,918N-work function metal with crystal structure20199,870,995'Formation of copper layer structure with self anneal strain improvement'20189,698,019'N-work function metal with crystal structure'20178,759,928'Image sensor cross-talk reduction system and method'20148,642,439'Semiconductor device and method of formation'20148,610,230'HfO2/SiO2-Si interface improvement for CMOS image sensor'20138,435,893'Semiconductor device and method of formation'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2014Patents assigned to TAIWAN SEMICONDUCTOR MFG (4)· patent assignee history
2013–2014Patents assigned to CHANG SHIH-CHIEH (2)· patent assignee history
2013–2014Patents assigned to NIAN JUN-NAN (2)· patent assignee history
2013–2021Based in Tainan, TW· patent location history
2014Patents assigned to CHANG CHIH-CHUNG (1)· patent assignee history
2017–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 8 | 2017–2021 |
| TAIWAN SEMICONDUCTOR MFG | 4 | 2013–2014 |
| CHANG SHIH-CHIEH | 2 | 2013–2014 |
| NIAN JUN-NANself | 2 | 2013–2014 |
| CHANG CHIH-CHUNG | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 12 | 2013–2021 |