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Inventor

Norikazu Ohshima

Inventor
Tokyo, JP

Overview

32→
Patents
2011–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 32 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores27%
H10NElectric solid-state devices not otherwise provided for27%
H10BElectronic memory devices26%
B82YSpecific uses or applications of nanostructures8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H01LSemiconductor devices3%
H01FMagnets2%
Y10TTechnical subjects covered by former us classification2%
G01RMeasuring electric variables1%
G11BInformation storage based on relative movement between record carrier and transducer1%
PatentTitleYear
9,379,312'Magnetoresistive effect element and magnetic random access memory using the same'20168,994,130'Magnetic memory element and magnetic memory'20158,923,042'Magnetic random access memory'20148,830,735'Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film'20148,791,534'Magnetic memory device and magnetic memory'20148,787,076'Magnetic memory and method of manufacturing the same'20148,737,119'Magnetic memory cell and magnetic random access memory'20148,687,414'Magnetic memory element and magnetic random access memory'20148,592,930'Magnetic memory element, magnetic memory and initializing method'20138,565,011'Method of initializing magnetic memory element'20138,559,214'Magnetic memory device and magnetic random access memory'20138,547,733'Magnetic random access memory'20138,537,604'Magnetoresistance element, MRAM, and initialization method for magnetoresistance element'20138,526,222'Magnetic random access memory'20138,514,616'Magnetic memory element and magnetic memory'20138,477,528'Magnetic memory cell and magnetic random access memory'20138,379,429'Domain wall motion element and magnetic random access memory'20138,363,461'Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory'20138,351,249'Magnetic random access memory'20138,315,087'Magnetic random access memory'20128,300,456'Magnetic random access memory and method of manufacturing the same'20128,238,135'MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region'20128,194,436'Magnetic random access memory, write method therefor, and magnetoresistance effect element'20128,174,086'Magnetoresistive element, and magnetic random access memory'20128,174,873'Magnetic random access memory and initializing method for the same'20128,159,872'Magnetic random access memory'20128,154,913'Magnetoresistance effect element and magnetic random access memory'20128,149,615'Magnetic random access memory'20128,120,950'Semiconductor device'20128,120,127'Magnetic random access memory and method of manufacturing the same'20128,040,724'Magnetic domain wall random access memory'20117,929,342'Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory'2011

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2016Patents assigned to NEC CORP (31)· patent assignee history
2011–2016Based in Tokyo, JP· patent location history
2012–2016Patents assigned to OHSHIMA NORIKAZU (29)· patent assignee history
2012–2016Patents assigned to ISHIWATA NOBUYUKI (23)· patent assignee history
2012–2016Patents assigned to SUZUKI TETSUHIRO (23)· patent assignee history
2012–2016Patents assigned to FUKAMI SHUNSUKE (20)· patent assignee history
2014Based in Kanagawa, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP312011–2016
OHSHIMA NORIKAZUself292012–2016
ISHIWATA NOBUYUKI232012–2016
SUZUKI TETSUHIRO232012–2016
FUKAMI SHUNSUKE202012–2016
Locations
LocationPatentsSpan
Tokyo, JP312011–2016
Kanagawa, JP12014