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Inventor

Atsushi Shiota

Inventor
Ibaraki, JP

Overview

27→
Patents
1998–2013
Patent span
Chemistry
Primary field (CPC C)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
C09DCoating compositions, e.g. paints, varnishes or lacquers19%
Y10TTechnical subjects covered by former us classification18%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds11%
C08LCompositions of macromolecular compounds6%
H01BCables6%
C08JWorking-up4%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
B05DProcesses for applying fluent materials to surfaces, in general2%
C23CCoating metallic material2%
PatentTitleYear
8,404,786'Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same'20138,268,403'Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation'20127,932,295'Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device'20117,875,317'Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming same'20117,736,748'Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same'20107,608,928'Laminated body and semiconductor device'20097,528,207'Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film'20097,514,151'Insulating film and method for forming the same, and film-forming composition'20097,399,715'Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device'20087,358,317'Polycarbosilane and method of producing the same'20087,297,360'Insulation film'20077,291,567'Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device'20077,026,053'Process for producing silica-based film, silica-based film, insulating film, and semiconductor device'20067,011,868'Fluorine-free plasma curing process for porous low-k materials'20066,902,771'Process for producing silica-based film, silica-based film, insulating film, and semiconductor device'20056,890,605'Method of film formation, insulating film, and substrate for semiconductor'20056,824,833'Stacked film, insulating film and substrate for semiconductor'20046,800,330'Composition for film formation, method of film formation, and silica-based film'20046,787,193'Method for the formation of silica film, silica film, insulating film, and semiconductor device'20046,749,944'Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor'20046,558,747'Method of forming insulating film and process for producing semiconductor device'20036,410,150'Composition for film formation, method of film formation, and insulating film'20026,410,151'Composition for film formation, method of film formation, and insulating film'20026,406,794'Film-forming composition'20026,190,833'Radiation-sensitive resin composition'20015,811,504'Liquid crystalline epoxy monomer and liquid crystalline epoxy resin containing mesogen twins'19985,773,178'Process for producing a patterned anisotropic polymeric film'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998Patents assigned to CORNELL RES FOUNDATION INC (2)· patent assignee history
1998–2003Based in Tsukuba, JP· patent location history
2001–2013Patents assigned to JSR CORP (25)· patent assignee history
2001–2011Based in Tokyo, JP· patent location history
2002–2006Based in Ibaraki, JP· patent location history
2007–2013Based in Sunnyvale, CA, US· patent location history
2009–2012Based in Ushiku, JP· patent location history
2012–2013Patents assigned to AKIYAMA MASAHIRO (2)· patent assignee history
2012–2013Patents assigned to KUROSAWA TAKAHIKO (2)· patent assignee history
2012–2013Patents assigned to NAKAGAWA HISASHI (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
JSR CORP252001–2013
AKIYAMA MASAHIRO22012–2013
CORNELL RES FOUNDATION INC21998
KUROSAWA TAKAHIKO22012–2013
NAKAGAWA HISASHI22012–2013
Locations
LocationPatentsSpan
Ibaraki, JP112002–2006
Sunnyvale, California, US72007–2013
Tokyo, JP32001–2011
Ushiku, JP22009–2012
Tsukuba, JP21998–2003