Inventor
JUN-NAN NIAN
Inventor
TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
C25DProcesses for the electrolytic or electrophoretic production of coatings12%
H10DInorganic electric semiconductor devices8%
PatentTitleYear
12,557,619Semiconductor structure including multiple barrier layers and method for forming the same202612,362,273Conductive structures and methods of fabrication thereof202512,341,055Method of manufacturing semiconductor devices and semiconductor devices202512,080,751Semiconductor device structure and methods of forming the same202411,603,602Method for controlling electrochemical deposition to avoid defects in interconnect structures202311,598,016Electrochemical plating system and method of using202311,230,784Electrochemical plating system and method of using2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 7 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 7 | 2022–2026 |