Inventor
Hangbing LV
Inventor
CN
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores22%
H10BElectronic memory devices21%
H10NElectric solid-state devices not otherwise provided for14%
G06NComputing arrangements based on specific computational models12%
H01LSemiconductor devices10%
H10DInorganic electric semiconductor devices10%
H03KPulse technique5%
H01GCapacitors2%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use2%
Y02PClimate change mitigation technologies in the production or processing of goods2%
PatentTitleYear
12,588,423Magnetoresistive device, method for changing resistance state thereof, and synapse learning module202612,525,406HfO202612,495,557Method of preparing programmable diode, programmable diode and ferroelectric memory202512,456,516Method for operating memory cell and resistive random access memory, and electronic device202512,444,463Memory cell structure, memory array structure, and voltage biasing method202512,431,175Self-reference storage structure and in-memory computing circuit202512,423,564Neuron circuit and neural network circuit202512,406,177Afferent neuron circuit and mechanoreceptive system202512,393,831Artificial sensory nervous circuit and manufacturing method thereof202512,260,902Complementary storage unit and method of preparing the same, and complementary memory202512,260,911Memory circuit structure and method of operating memory circuit structure202512,205,630Symmetric memory cell and BNN circuit202512,124,945Neural network operation device202412,002,500Writing method and erasing method of fusion memory202411,790,968Spintronic device, SOT-MRAM storage cell, storage array and in-memory computing circuit202311,776,607Fusion memory202311,641,787Self-rectifying resistive memory and fabrication method thereof202311,245,074Resistance random access memory and method for fabricating the same202211,223,013Conductive bridge semiconductor component and manufacturing method therefor202211,205,7501S1R memory integrated structure with larger selector surface area which can effectively suppress leakage current in the cross array without increasing the overall size of the integrated structure and method for fabricating the same202111,189,345Method for implementing logic calculation based on a crossbar array structure of resistive switching device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to INST OF MICROELECTRONICS CAS (16)· patent assignee history
2021–2026Based in CN· patent location history
2023–2026Patents assigned to INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INST OF MICROELECTRONICS CAS | 16 | 2021–2026 |
| INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES | 5 | 2023–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 21 | 2021–2026 |