Inventor
Kuei-Yu Kao
Inventor
TW
Overview
Patents· 44 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H01LSemiconductor devices29%
B82YSpecific uses or applications of nanostructures17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
PatentTitleYear
12,557,369Gate profile control through sidewall protection during etching202612,484,276Replacement structures202512,463,047Methods for forming stacked layers and devices formed thereof202512,426,311Gate structures and spacers in semiconductor devices and methods of manufacturing thereof202512,402,353Method of manufacturing a semiconductor device and a semiconductor device202512,402,402Transistor gate profile optimization202512,364,003Semiconductor devices and methods of manufacturing thereof202512,362,285Alignment structure for semiconductor device and method of forming same202512,300,742Fin field-effect transistor device and method of forming the same202512,294,023Method of manufacturing a semiconductor device having corner spacers adjacent a fin sidewall202512,288,812Semiconductor devices and methods of fabrication thereof202512,266,715Semiconductor devices and methods of manufacturing thereof202512,261,213Fin-end gate structures and method forming same202512,243,748FinFET device having a gate with a tapering bottom portion and a gate fill material with a widening bottom portion202512,230,545Semiconductor devices including dummy gate dielectric layer and methods of manufacturing thereof202512,199,151Process window control for gate formation in semiconductor devices202512,198,984Semiconductor device including gate spacer with tilted portion and method of manufacturing thereof202512,166,096Semiconductor device structure with uneven gate profile202412,087,638Multi-channel devices and methods of manufacture202412,034,056Semiconductor devices including gate structures with gate spacers202411,942,363Methods for forming stacked layers and devices formed thereof202411,923,440Semiconductor devices and methods of manufacturing thereof202411,908,920Fin field-effect transistor device and method of forming the same202411,908,746Semiconductor devices and methods of manufacturing thereof202411,908,903Process window control for gate formation in semiconductor devices202411,855,093Semiconductor devices and methods of manufacturing thereof202311,842,929Semiconductor devices and methods of manufacturing thereof202311,769,821Semiconductor device having a corner spacer202311,715,779Multi-channel devices and methods of manufacture202311,652,003Gate formation process202311,631,745Semiconductor device structure with uneven gate profile202311,557,590Transistor gate profile optimization202311,532,723Fin-end gate structures and method forming same202211,522,073Semiconductor devices and methods of manufacturing thereof202211,488,858Methods for forming stacked layers and devices formed thereof202211,482,421Method of forming a semiconductor device by a replacement gate process202211,476,347Processes for removing spikes from gates202211,393,769Alignment structure for semiconductor device and method of forming same202211,309,403Fin field-effect transistor device and method of forming the same202211,302,581Gate profile control through sidewall protection during etching202211,289,585Semiconductor devices and methods of formation202211,264,283Multi-channel devices and methods of manufacture202211,264,282Gate formation process202211,205,647Semiconductor device and method of manufacture2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (44)· patent assignee history
2021–2026Based in TW· patent location history
2022Patents assigned to TAIWAN SEMICONDUTOR MFG COMPANY LIMITED (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 44 | 2021–2026 |
| TAIWAN SEMICONDUTOR MFG COMPANY LIMITED | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 44 | 2021–2026 |