Inventor
Ching-Hsueh Chiu
Inventor
Hsinchu, TW
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices39%
H10HInorganic light-emitting semiconductor devices having potential barriers39%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
B82YSpecific uses or applications of nanostructures2%
C30BSingle-crystal growth2%
G01RMeasuring electric variables2%
G02BOptical elements, systems or apparatus2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,418,512Manufacturing method for light emitting diode crystal grains using adhesive layer on auxiliary substrate to fill gaps between light emitting diode crystal grains201910,416,225Detection method for light emitting diode chip201910,109,770Method for manufacturing light emitting diode201810,050,176Light emitting diode die and manufacturing method thereof20189,786,818'Light emitting diode and method for manufacturing the same'20179,722,142'Light emitting diode die and manufacturing method thereof'20179,680,059'Flip chip light emitting diode and method for manufacturing the same'20179,653,648'LED die'20179,577,163'Light emitting diode package and method thereof'20179,508,896'Light emitting diode chip and method of manufacturing same'20169,472,721'Epitaxial substrate, method of manufacturing the epitaxial substrate and light emitting diode having epitaxial substrate'20169,312,658'Optoelectronic module and method for manufacturing the same'20169,287,451'LED die and method of manufacturing the same'20169,219,190'Single photon source die and method of manufacturing the same'20159,130,087'Light emitting diode having carbon nanotubes therein and method for manufacturing the same'20159,105,763'Light emitting diode chip and manufacturing method thereof'20159,070,829'Light emitting diode chip and method for manufacturing the same'20159,029,831'Light emitting diode and method for manufacturing light emitting diodes'20159,000,445'Light emitting diode with wave-shaped Bragg reflective layer and method for manufacturing same'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2019Patents assigned to ADVANCED OPTOELECTRONIC TECH (19)· patent assignee history
2015–2019Based in Hsinchu, TW· patent location history
2016–2019Patents assigned to ADVANCED OPTOELECTRONICS TECH INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ADVANCED OPTOELECTRONIC TECH | 19 | 2015–2019 |
| ADVANCED OPTOELECTRONICS TECH INC | 2 | 2016–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 19 | 2015–2019 |