Inventor
Jr-Hung Li
Inventor
Jhubei City, TW
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10DInorganic electric semiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
C23CCoating metallic material5%
C30BSingle-crystal growth5%
B23QDetails, components, or accessories for machine tools, e.g. arrangements for copying or controlling3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H01JElectric discharge tubes or discharge lamps2%
H05BElectric heating2%
PatentTitleYear
10,854,521Low-k gate spacer and formation thereof202010,840,357FinFET device and method of forming same202010,804,271Semiconductor structure and device each having differential etch stop layer over gate spacer202010,797,050Fin field effect transistor (finFET) device structure with capping layer and method for forming the same202010,763,104Method of forming differential etch stop layer using directional plasma to activate surface on device structure202010,519,545Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate201910,510,612Low-K gate spacer and formation thereof201910,505,021FinFet device and method of forming the same201910,504,990Isolation features and methods of fabricating the same201910,483,168Low-k gate spacer and formation thereof201910,475,788Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same201910,468,529Structure and formation method of semiconductor device structure with etch stop layer201910,435,811Wafer susceptor with improved thermal characteristics20199,960,059Honeycomb heaters for integrated circuit manufacturing20189,517,539'Wafer susceptor with improved thermal characteristics'20169,011,599'Method of temperature determination for deposition reactors'20157,868,317'MOS devices with partial stressor channel'20117,554,110'MOS devices with partial stressor channel'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2011Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2009–2011Based in Taipei, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (16)· patent assignee history
2015Patents assigned to CHEN BING-HUNG (1)· patent assignee history
2015Patents assigned to LEE TZE-LIANG (1)· patent assignee history
2015–2020Based in Jhubei City, TW· patent location history
2018Patents assigned to LEE TZE LIANG (1)· patent assignee history
2019Based in Hsinchu County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 16 | 2015–2020 |
| TAIWAN SEMICONDUCTOR MFG | 2 | 2009–2011 |
| CHEN BING-HUNG | 1 | 2015 |
| LEE TZE LIANG | 1 | 2018 |
| LEE TZE-LIANG | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Jhubei City, TW | 13 | 2015–2020 |
| Hsinchu County, TW | 3 | 2019 |
| Taipei, TW | 2 | 2009–2011 |