Inventor

Se-Ho Lee

Inventor

Gyeonggi-do, KR

Overview

2004–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary

H10NElectric solid-state devices not otherwise provided for22%

H10BElectronic memory devices16%

G11CStatic stores15%

H01LSemiconductor devices8%

H10DInorganic electric semiconductor devices8%

H10KOrganic electric solid-state devices5%

C08JWorking-up4%

C08LCompositions of macromolecular compounds4%

C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds3%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%

PatentTitleYear

10,877,853Data storage device and operation method optimized for recovery performance, and storage system having the same2020 10,875,966Polyarylene sulfide and a preparation method thereof2020 10,854,707Semiconductor device including dielectric structure having ferroelectric layer and non-ferroelectric layer2020 10,822,457Polyarylene sulfide resin and preparation method thereof2020 10,515,693Data storage apparatus and operating method thereof2019 10,494,526Polyarylene sulfide resin composition and formed article2019 10,446,613Method of manufacturing an organic light emitting diode display having an auxiliary member in contact with an upper surface of an auxiliary electrode2019 10,147,769Organic light emitting diode display having an auxiliary member in contact with an upper surface of an auxiliary electrode2018 9,818,481'Resistive memory device and operation method thereof'2017 9,650,515'Polyarylene sulfide resin composition and a preparation method thereof'2017 9,613,690'Resistive memory device and operation method thereof'2017 9,570,525'Organic light emitting display apparatus and method of manufacturing the same'2017 9,546,248'Polyarylene sulfide having excellent processability and preparation method thereof'2017 9,502,646'Semiconductor integrated circuit device having encapsulation film and method of fabricating the same'2016 9,450,039'Organic light emitting display apparatus and method of manufacturing the same'2016 9,437,295'Semiconductor system including semiconductor memory apparatus and temperature control method thereof'2016 9,401,393'Organic light-emitting display device and method of manufacturing the same'2016 9,362,345'Organic light emitting display apparatus and method of manufacturing the same'2016 9,236,121'Semiconductor memory apparatus and temperature control method thereof'2016 9,087,575'Phase change memory device having multi-level and method of driving the same'2015 9,074,048'Polyarylene sulfide and preparation method thereof'2015 9,076,983'Organic light-emitting display device and method of manufacturing the same'2015 9,054,304'Resistive memory device capable of preventing disturbance and method for manufacturing the same'2015 8,982,606'Phase change memory device having multi-level and method of driving the same'2015 8,982,605'Phase change memory device having multi-level and method of driving the same'2015 8,842,461'Phase change memory device having multi-level and method of driving the same'2014 8,837,177'Electric generating system using solar cell'2014 8,482,328'Switching device and method for preventing malfunction of the same'2013 8,440,991'Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same'2013 8,351,240'Phase change memory device having multi-level and method of driving the same'2013 8,278,639'High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof'2012 8,174,876'Fusion memory device embodied with phase change memory devices having different resistance distributions and data processing system using the same'2012 8,159,869'Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the same'2012 8,120,005'Phase change memory devices and their methods of fabrication'2012 8,119,478'Multi-bit phase-change random access memory (PRAM) with diameter-controlled contacts and methods of fabricating and programming the same'2012 8,026,543'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'2011 7,888,667'Phase change memory device'2011 7,732,250'Methods of forming phase changeable layers including protruding portions in electrodes thereof'2010 7,671,395'Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other'2010 7,667,998'Phase change memory device and method of forming the same'2010 7,625,777'Memory device having highly integrated cell structure and method of its fabrication'2009 7,598,112'Phase change memory devices and their methods of fabrication'2009 7,534,723'Methods of forming fine patterns, and methods of forming trench isolation layers using the same'2009 7,482,616'Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same'2009 7,442,602'Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other'2008 7,411,208'Phase-change memory device having a barrier layer and manufacturing method'2008 7,385,218'Phase changeable layers including protruding portions in electrodes thereof and methods of forming same'2008 7,339,185'Phase change memory device and method for forming the same'2008 7,323,708'Phase change memory devices having phase change area in porous dielectric layer'2008 7,282,761'Semiconductor memory devices having offset transistors and methods of fabricating the same'2007 7,214,957'PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same'2007 7,130,214'Low-current and high-speed phase-change memory devices and methods of driving the same'2006 7,105,396'Phase changeable memory cells and methods of fabricating the same'2006 7,018,911'Methods for fabrication for phase-changeable memory devices having phase-changeable material regions with lateral contacts'2006 6,995,388'Phase changeable memory devices and methods of forming the same in which an upper electrode includes a tip that extends toward a lower electrode'2006 6,967,865'Low-current and high-speed phase-change memory devices and methods of driving the same'2005 6,841,793'Phase-changeable devices having an insulating buffer layer and methods of fabricating the same'2005 6,806,528'Phase-changeable memory devices having phase-changeable material regions with lateral contacts and methods of fabrication therefor'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2012Patents assigned to SAMSUNG ELECTRONICS CO LTD (24)· patent assignee history

2004–2020Based in Gyeonggi-do, KR· patent location history

2005–2012Based in Seoul, KR· patent location history

2012–2014Patents assigned to LEE SE HO (7)· patent assignee history

2013–2020Patents assigned to SK HYNIX INC (14)· patent assignee history

2015–2019Patents assigned to SAMSUNG DISPLAY CO LTD (7)· patent assignee history

2015–2020Patents assigned to SK CHEMICALS CO LTD (6)· patent assignee history

2015–2016Based in Yongin, KR· patent location history

2015Based in Ichon-si, KR· patent location history

2017–2020Based in Yongin-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	24	2004–2012
SK HYNIX INC	14	2013–2020
LEE SE HOself	7	2012–2014
SAMSUNG DISPLAY CO LTD	7	2015–2019
SK CHEMICALS CO LTD	6	2015–2020

Locations

Location	Patents	Span
Gyeonggi-do, KR	28	2004–2020
Seoul, KR	16	2005–2012
Yongin, KR	4	2015–2016
Ichon-si, KR	3	2015
Yongin-si, KR	2	2017–2020