Inventor
Kazuki Mizushima
Inventor
Saitama, JP
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C01Bprimary
C01BNon-metallic elements16%
Y10TTechnical subjects covered by former us classification14%
B31FMechanical working or deformation of paper, cardboard or material worked in a manner analogous to paper7%
C23CCoating metallic material7%
H10DInorganic electric semiconductor devices7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry5%
B05CApparatus for applying fluent materials to surfaces, in general5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
PatentTitleYear
10,040,266Glue application device and glue application method for cardboard sheets and cardboard sheet manufacturing device20189,994,455Apparatus and method for manufacturing trichlorosilane and method for manufacturing polycrystalline silicon20189,833,966Web adhesive application device and adhesive application method as well as cardboard sheet manufacturing device20179,643,347'Heat-resistant laminated conveyer belt'20179,468,042'Apparatus for producing trichlorosilane'20169,409,374'Double facer, and method and device for gluing thereof'20169,169,560'Apparatus for producing polycrystalline silicon'20158,551,580'Method for producing polycrystalline silicon'20138,507,051'Polycrystalline silicon producing method'20138,372,346'Apparatus for producing trichlorosilane'20138,168,152'Method for producing trichlorosilane and method for utilizing trichlorosilane'20127,138,650'Semiconductor substrate, field-effect transistor, and their manufacturing method of the same'20067,056,789'Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor'20066,569,534'Optical material and optical element using the same'20036,525,338'Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor'20036,399,225'Silicon-and-nitrogen-containing luminescent substance, method for forming the same, and light emitting device using the same'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2018Patents assigned to MITSUBISHI MATERIALS CORP (10)· patent assignee history
2002–2018Based in Omiya, JP· patent location history
2003–2016Based in Saitama, JP· patent location history
2006–2017Based in Tokyo, JP· patent location history
2012–2018Patents assigned to MIZUSHIMA KAZUKI (7)· patent assignee history
2012–2018Patents assigned to SAIKI WATARU (4)· patent assignee history
2013–2018Patents assigned to URUSHIHARA MAKOTO (3)· patent assignee history
2016–2017Patents assigned to MITSUBISHI HEAVY IND PRINTING (3)· patent assignee history
2016–2018Based in Mihara, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI MATERIALS CORP | 10 | 2002–2018 |
| MIZUSHIMA KAZUKIself | 7 | 2012–2018 |
| SAIKI WATARU | 4 | 2012–2018 |
| MITSUBISHI HEAVY IND PRINTING | 3 | 2016–2017 |
| URUSHIHARA MAKOTO | 3 | 2013–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saitama, JP | 8 | 2003–2016 |
| Mihara, JP | 3 | 2016–2018 |
| Omiya, JP | 3 | 2002–2018 |
| Tokyo, JP | 2 | 2006–2017 |