Inventor
Rashmi Jha
Inventor
Toledo, OH, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
G11CStatic stores10%
H01LSemiconductor devices10%
H10NElectric solid-state devices not otherwise provided for10%
H10BElectronic memory devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,854,812Systems and methods for gated-insulator reconfigurable non-volatile memory devices202010,553,793Systems and methods for gated-insulator reconfigurable non-volatile memory devices20209,564,505'Changing effective work function using ion implantation during dual work function metal gate integration'20178,753,936'Changing effective work function using ion implantation during dual work function metal gate integration'20148,502,343'Nanoelectric memristor device with dilute magnetic semiconductors'20138,436,427'Dual metal and dual dielectric integration for metal high-K FETs'20138,183,642'Gate effective-workfunction modification for CMOS'20128,138,041'In-situ silicon cap for metal gate electrode'20128,120,144'Method for forming dual high-K metal gate using photoresist mask and structures thereof'20128,053,306'PFET with tailored dielectric and related methods and integrated circuit'20117,955,926'Structure and method to control oxidation in high-k gate structures'20117,947,549'Gate effective-workfunction modification for CMOS'20117,943,457'Dual metal and dual dielectric integration for metal high-k FETs'20117,919,379'Dielectric spacer removal'20117,915,115'Method for forming dual high-k metal gate using photoresist mask and structures thereof'20117,838,908'Semiconductor device having dual metal gates and method of manufacture'20107,754,594'Method for tuning the threshold voltage of a metal gate and high-k device'20107,498,271'Nitrogen based plasma process for metal gate MOS device'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2014Patents assigned to IBM (14)· patent assignee history
2009–2013Based in Wappingers Falls, NY, US· patent location history
2010–2014Based in Toledo, OH, US· patent location history
2011Patents assigned to ADVANCED MICRO DEVICES INC (2)· patent assignee history
2011–2017Based in Beacon, NY, US· patent location history
2012–2014Patents assigned to JHA RASHMI (6)· patent assignee history
2012–2014Patents assigned to CHUDZIK MICHAEL P (5)· patent assignee history
2012–2014Patents assigned to MOUMEN NAIM (3)· patent assignee history
2020Based in Wyoming, OH, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 14 | 2009–2014 |
| JHA RASHMIself | 6 | 2012–2014 |
| CHUDZIK MICHAEL P | 5 | 2012–2014 |
| MOUMEN NAIM | 3 | 2012–2014 |
| ADVANCED MICRO DEVICES INC | 2 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Toledo, OH, US | 7 | 2010–2014 |
| Wappingers Falls, New York, US | 6 | 2009–2013 |
| Beacon, New York, US | 3 | 2011–2017 |
| Wyoming, OH, US | 2 | 2020 |