Inventor
Seung-Pil Ko
Inventor
Hwaseong-si, KR
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for23%
H10BElectronic memory devices21%
G11CStatic stores19%
H01LSemiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
10,818,727Semiconductor devices202010,804,320Insulation layer arrangement for magnetic tunnel junction device202010,573,806Method of fabricating semiconductor device202010,504,902Data storage devices and methods of manufacturing the same201910,283,698Semiconductor devices and methods of fabricating the same20199,543,357'Magnetoresistive random access memory devices and methods of manufacturing the same'20179,012,877'Semiconductor device including a diode and method of manufacturing the same'20158,969,996'Semiconductor device with buried word line structures'20158,772,096'Method of forming a contact and method of manufacturing a phase change memory device using the same'20148,199,567'Multiple level cell phase-change memory devices having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices'20127,939,366'Phase change memory devices and methods of forming the same'20117,940,552'Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices'20117,906,773'Phase change memory device'20117,778,079'Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices'20107,701,749'Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices'20107,541,252'Methods of fabricating a semiconductor device including a self-aligned cell diode'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (16)· patent assignee history
2009–2012Based in Suwon-si, KR· patent location history
2012–2017Patents assigned to KO SEUNG-PIL (3)· patent assignee history
2012Patents assigned to CHANG-WOOK JEONG (1)· patent assignee history
2012Patents assigned to JEONG GI-TAE (1)· patent assignee history
2014–2020Based in Hwaseong-si, KR· patent location history
2019Patents assigned to JEONG DAEEUN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 16 | 2009–2020 |
| KO SEUNG-PILself | 3 | 2012–2017 |
| CHANG-WOOK JEONG | 1 | 2012 |
| JEONG DAEEUN | 1 | 2019 |
| JEONG GI-TAE | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 9 | 2014–2020 |
| Suwon-si, KR | 7 | 2009–2012 |