Inventor

Ming-Bing Chang

Inventor
Santa Clara, CA, US

Overview

22→
Patents
1993–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores28%
H10DInorganic electric semiconductor devices28%
H10BElectronic memory devices26%
C23CCoating metallic material3%
H01LSemiconductor devices3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
B05BSpraying apparatus2%
B05DProcesses for applying fluent materials to surfaces, in general2%
G06FElectric digital data processing2%
G10LSpeech analysis techniques or speech synthesis2%
PatentTitleYear
11,033,930Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition202111,018,009Tuning work function of p-metal work function films through vapor deposition20216,959,279'Text-to-speech conversion system on an integrated circuit'20056,865,186'Multiple message multilevel analog signal recording and playback system having memory array configurable for analog and digital storage and serial communication'20056,716,700'Method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cell'20046,563,733'Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cell'20036,261,907'Method of forming a flash EEPROM device by employing polysilicon sidewall spacer as an erase gate'20016,125,060'Flash EEPROM device employing polysilicon sidewall spacer as an erase gate'20006,101,131'Flash EEPROM device employing polysilicon sidewall spacer as an erase gate'20006,043,530'Flash EEPROM device employing polysilicon sidewall spacer as an erase gate'20005,991,204'Flash eeprom device employing polysilicon sidewall spacer as an erase gate'19995,841,700'Source-coupling, split gate, virtual ground flash EEPROM array'19985,705,439'Method to make an asymmetrical LDD structure for deep sub-micron MOSFETS'19985,644,532'Method for programming a cell in a source-coupling, split-gate, virtual ground flash EEPROM array'19975,612,240'Method for making electrical connections to self-aligned contacts that extends beyond the photo-lithographic resolution limit'19975,506,160'Method of fabricating a self-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM array'19965,480,821'Method of fabricating source-coupling, split-gate, virtual ground flash EEPROM array'19965,412,238'Source-coupling, split-gate, virtual ground flash EEPROM array'19955,379,254'Asymmetrical alternate metal virtual ground EPROM array'19955,313,419'Self-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM array'19945,273,923'Process for fabricating an EEPROM cell having a tunnel opening which overlaps field isolation regions'19935,258,949'Nonvolatile memory with enhanced carrier generation and method for programming the same'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993Patents assigned to MOTOROLA INC (2)· patent assignee history
1993–2005Based in Santa Clara, CA, US· patent location history
1993Based in Austin, TX, US· patent location history
1994–1998Patents assigned to NAT SEMICONDUCTOR CORP (7)· patent assignee history
1997–1998Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2003–2005Patents assigned to WINBOND ELECTRONICS CORP (3)· patent assignee history
2005Based in Los Altos Hills, CA, US· patent location history
2021Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history
2021Based in Saratoga, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NAT SEMICONDUCTOR CORP71994–1998
WINBOND ELECTRONICS CORP32003–2005
APPLIED MATERIALS INC22021
MOTOROLA INC21993
TAIWAN SEMICONDUCTOR MFG21997–1998
Locations
LocationPatentsSpan
Santa Clara, California, US181993–2005
Saratoga, California, US22021
Los Altos Hills, California, US12005
Austin, Texas, US11993