Inventor
Minghwei Hong
Inventor
Watchung, NJ, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light15%
C23CCoating metallic material9%
H01LSemiconductor devices9%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
C30BSingle-crystal growth3%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
10,755,924Material having single crystal perovskite, device including the same, and manufacturing method thereof202010,283,349Single-crystal rare earth oxide grown on III-V compound201910,158,014MOS devices with ultra-high dielectric constants and methods of forming the same201810,032,770Semiconductor device structure and method20189,620,605'Semiconductor device structure and method'20179,614,079'MOS devices with ultra-high dielectric constants and methods of forming the same'20176,495,407'Method of making an article comprising an oxide layer on a GaAs-based semiconductor body'20026,469,357'Article comprising an oxide layer on a GaAs or GaN-based semiconductor body'20026,404,027'High dielectric constant gate oxides for silicon-based devices'20026,271,069'Method of making an article comprising an oxide layer on a GaAs-based semiconductor body'20015,962,883'Article comprising an oxide layer on a GaAs-based semiconductor body'19995,912,498'Article comprising an oxide layer on GAN'19995,903,037'GaAs-based MOSFET, and method of making same'19995,821,171'Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article'19985,559,053'Vertical cavity semiconductor laser'19965,348,912'Semiconductor surface emitting laser having enhanced optical confinement'19945,275,687'Process for removing surface contaminants from III-V semiconductors'19945,213,995'Method of making an article comprising a periodic heteroepitaxial semiconductor structure'19935,212,701'Semiconductor surface emitting laser having enhanced optical confinement'19935,208,183'Method of making a semiconductor laser'19935,088,099'Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–1994Patents assigned to AT & T BELL LAB (6)· patent assignee history
1992–1994Based in Berkeley Heights, NJ, US· patent location history
1994–2002Based in Watchung, NJ, US· patent location history
1996–1999Patents assigned to LUCENT TECHNOLOGIES INC (5)· patent assignee history
2001–2002Patents assigned to AGERE SYST GUARDIAN CORP (3)· patent assignee history
2017–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (6)· patent assignee history
2017–2020Patents assigned to UNIV NAT TAIWAN (5)· patent assignee history
2017–2020Based in Zhubei City, TW· patent location history
2019Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AT & T BELL LAB | 6 | 1992–1994 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 6 | 2017–2020 |
| LUCENT TECHNOLOGIES INC | 5 | 1996–1999 |
| UNIV NAT TAIWAN | 5 | 2017–2020 |
| AGERE SYST GUARDIAN CORP | 3 | 2001–2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Watchung, New Jersey, US | 10 | 1994–2002 |
| Zhubei City, TW | 5 | 2017–2020 |
| Berkeley Heights, New Jersey, US | 5 | 1992–1994 |
| Hsinchu, TW | 1 | 2019 |