Inventor
Jong-Mil Youn
Inventor
Yongin-si, KR
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H01LSemiconductor devices27%
H10BElectronic memory devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G11CStatic stores2%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
10,714,614Semiconductor device including a first fin active region and a second fin active region202010,153,270Electrostatic discharge protection devices201810,084,088Method for fabricating a semiconductor device having a first fin active pattern and a second fin active pattern201810,032,886Semiconductor device20189,929,155'Semiconductor device having symmetric and asymmetric active fins'20189,922,979'Integrated circuit device and method of manufacturing the same'20189,698,264'Semiconductor device and method for fabricating the same'20179,515,182'High-integration semiconductor device and method for fabricating the same'20169,502,417'Semiconductor device having a substrate including a first active region and a second active region'20169,478,551'Semiconductor devices and methods of manufacturing the same'20169,461,173'Semiconductor device and method for fabricating the same'20169,240,411'Semiconductor device and method for fabricating the same'20169,209,184'High-integration semiconductor device and method for fabricating the same'20159,099,336'Semiconductor device and fabricating method thereof'20159,048,219'High integration semiconductor device and method for fabricating the same'20159,048,236'Semiconductor device and method of fabricating the same'20157,112,831'Ternary content addressable memory cell'20066,165,900'Method for manufacturing semiconductor device'20006,147,385'CMOS static random access memory devices'20005,814,538'Methods of forming BiCMOS devices having dual-layer emitter electrodes and thin-film transistors therein'19985,173,760'BiCMOS semiconductor device'19925,077,226'Manufacturing method for BiCMOS devices'19914,970,174'Method for making a BiCMOS semiconductor device'19904,950,616'Method for fabricating a BiCMOS device'19904,912,055'Method of fabricating a semiconductor device'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
1992–1998Based in Kyungki-do, KR· patent location history
2000Based in Kyonggi-do, KR· patent location history
2000Based in Songnam-shi, KR· patent location history
2006Based in Gyeonggi-do, KR· patent location history
2015–2020Based in Yongin-si, KR· patent location history
2018Patents assigned to YOUN JONG MIL (3)· patent assignee history
2018Patents assigned to KIM HYUN JO (2)· patent assignee history
2018Patents assigned to CHA KYU MAN (1)· patent assignee history
2018Patents assigned to CHUNG JAE YUP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 25 | 1990–2020 |
| YOUN JONG MILself | 3 | 2018 |
| KIM HYUN JO | 2 | 2018 |
| CHA KYU MAN | 1 | 2018 |
| CHUNG JAE YUP | 1 | 2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 16 | 2015–2020 |
| Kyungki-do, KR | 2 | 1992–1998 |
| Gyeonggi-do, KR | 1 | 2006 |
| Kyonggi-do, KR | 1 | 2000 |
| Songnam-shi, KR | 1 | 2000 |