Inventor
Shou-Kong Fan
Inventor
Richardson, TX, US
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices42%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests29%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G11CStatic stores4%
H03KPulse technique4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
PatentTitleYear
6,979,868'Bypass circuits for reducing plasma damage'20056,537,883'Method for reducing plasma damage to a gate oxide of a metal-oxide semiconductor wafer'20036,384,639'Circuit and method for reducing static power dissipation in a semiconductor device'20026,159,816'Method of fabricating a bipolar transistor'20005,783,966'Reducing junction capacitance and increasing current gain in collector-up bipolar transistors'19985,700,701'Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors'19975,552,617'Bipolar transistor'19965,552,667'Apparatus and method for generating photluminescence emission lines from rare-earth-element-doped CAF2 thin films over a SI-based substrate'19965,455,440'Method to reduce emitter-base leakage current in bipolar transistors'19955,434,091'Method for making collector up bipolar transistors having reducing junction capacitance and increasing current gain'19955,330,932'Method for fabricating GaInP/GaAs structures'19945,306,385'Method for generating photoluminescence emission lines from transition element doped CAF2 thin films over a Si-based substrate'19945,298,439'1/f noise reduction in heterojunction bipolar transistors'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–1998Patents assigned to TEXAS INSTRUMENTS INC (9)· patent assignee history
1994–2000Based in Richardson, TX, US· patent location history
1997Based in Taiwan, TW· patent location history
1998Based in Taipei, TW· patent location history
2000Patents assigned to TRIQUINT SEMICONDUCTOR TEXAS I (1)· patent assignee history
2002–2005Patents assigned to UNITED MICROELECTRONICS CORP (3)· patent assignee history
2002Based in Hsinchu, TW· patent location history
2003–2005Based in Hsinchu County, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 9 | 1994–1998 |
| UNITED MICROELECTRONICS CORP | 3 | 2002–2005 |
| TRIQUINT SEMICONDUCTOR TEXAS I | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Richardson, Texas, US | 7 | 1994–2000 |
| Hsinchu County, TW | 2 | 2003–2005 |
| Hsinchu, TW | 1 | 2002 |
| Taipei, TW | 1 | 1998 |
| Taiwan, TW | 1 | 1997 |