Inventor
Tae MOCHIZUKI
Inventor
JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth21%
H01LSemiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10DInorganic electric semiconductor devices15%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form6%
C23CCoating metallic material6%
PatentTitleYear
12,351,943n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method202512,107,129Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device202411,987,903N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method202411,810,782Conductive C-plane GaN substrate202311,664,428Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device202311,591,715GaN single crystal and method for manufacturing GaN single crystal202311,404,268Method for growing GaN crystal and c-plane GaN substrate2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to MITSUBISHI CHEM CORP (7)· patent assignee history
2022–2025Based in JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI CHEM CORP | 7 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 7 | 2022–2025 |