Inventor
Hsueh-Shih Chen
Inventor
Hsinchu, TW
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures14%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
C09KMaterials for miscellaneous applications, not provided for elsewhere8%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
H01LSemiconductor devices6%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry4%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds4%
H10DInorganic electric semiconductor devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
C01BNon-metallic elements3%
PatentTitleYear
10,781,365Combination solution of colloidal quantum dots and method for making the same202010,713,977Anti-counterfeit security verification method and device using quantum dots202010,670,231Light conversion material with light reflective structure and light-emitting diode device having the same202010,611,957Quantum dot luminophore202010,261,643Transparent conductive film201910,193,006Nanowire composite structure and methods of forming the same, sensing device and methods of forming the same and protective structures of a nanowire201910,010,850Non-contact reactor and nanocrystal fabrication system having the same20189,997,355Method for preparing a quantum dot mixture with a bimodal size distribution20189,982,140Inorganic-organic hybrid oxide polymer and manufacturing method thereof20189,925,530'Nanoporous thin film and method for fabricating the same'20189,890,329'Quantum dot nanocrystal structure'20188,940,244'High thermal stable hollow mesoporous nanotubes, preparation and application for the same'20157,935,388'Process for forming a quantum-dot particle layer on a substrate'20117,566,435'Nanowires and method for making the same'20097,507,599'ZnX (X=S, Se, Te) quantum dot preparation method'20097,342,260'Light emitting diode'20087,303,937'Method of manufacturing a quantum-dot element'20077,192,850'Method for doping quantum dots'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2011Patents assigned to IND TECH RES INST (6)· patent assignee history
2007–2020Based in Hsinchu, TW· patent location history
2015Patents assigned to NAT UNIV TSING HUA (1)· patent assignee history
2018–2020Patents assigned to UNIV NAT TSING HUA (10)· patent assignee history
2020Patents assigned to TSING YAN TECH CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV NAT TSING HUA | 10 | 2018–2020 |
| IND TECH RES INST | 6 | 2007–2011 |
| NAT UNIV TSING HUA | 1 | 2015 |
| TSING YAN TECH CO LTD | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 18 | 2007–2020 |