Inventor
KAI-LIN LEE
Inventor
TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
B60LPropulsion of electrically-propelled vehicles2%
B60WConjoint control of vehicle sub-units of different type or different function2%
Y02TClimate change mitigation technologies related to transportation2%
PatentTitleYear
12,471,304High electron mobility transistor (HEMT) device for increasing the Schottky diode current and method of forming the same202512,396,195High electron mobility transistor device and manufacturing method thereof202512,396,201HEMT and method of fabricating the same202512,289,900HEMT and method of fabricating the same202512,266,723Semiconductor device and method for forming the same202512,176,403High electron mobility transistor device202412,132,095Method of fabricating metal gate transistor202412,107,121Method for forming air gap between gate dielectric layer and spacer202412,107,157High electron mobility transistor and method for fabricating the same202411,955,541Semiconductor device and method for forming the same202411,749,748High electron mobility transistor and method for fabricating the same202311,715,784Method for forming a high-voltage metal-oxide-semiconductor transistor device202311,664,450High voltage semiconductor device202311,652,154Method of fabricating metal gate transistor202311,610,973High voltage transistor structure and method of fabricating the same202311,527,652Semiconductor process202211,380,777Method for forming a high-voltage metal-oxide-semiconductor transistor device202211,332,120Method of energy management and computer system for energy management202211,251,279High voltage transistor structure and method of fabricating the same202211,239,327HEMT and method of adjusting electron density of 2DEG2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to UNITED MICROELECTRONICS CORP (19)· patent assignee history
2022Patents assigned to UNIV NAT TAIWAN NORMAL (1)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 19 | 2022–2025 |
| UNIV NAT TAIWAN NORMAL | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 20 | 2022–2025 |