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Inventor

Shigehiko Sasa

Inventor
Isehara, JP

Overview

5→
Patents
1986–1997
Patent span
Electricity
Primary field (CPC H)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices71%
B82YSpecific uses or applications of nanostructures29%
PatentTitleYear
5,682,046'Heterojunction bipolar semiconductor device and its manufacturing method'19975,406,094'Quantum interference effect semiconductor device and method of producing the same'19955,130,766'Quantum interference type semiconductor device'19924,833,508'High electron mobility device with intrinsic AlAs/GaAs superlattice separator region'19894,593,301'High electron mobility semiconductor device employing selectively doped heterojunction and dual, undoped spacer layers'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–1997Patents assigned to FUJITSU LTD (5)· patent assignee history
1986–1992Based in Isehara, JP· patent location history
1995Based in Kawasaki, JP· patent location history
1997Based in Hirakata, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJITSU LTD51986–1997
Locations
LocationPatentsSpan
Isehara, JP31986–1992
Hirakata, JP11997
Kawasaki, JP11995