Inventor
CHIH-CHANG HUNG
Inventor
TW
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10BElectronic memory devices3%
PatentTitleYear
12,581,720Method of manufacturing a semiconductor device and a semiconductor device202612,490,496Metal gate structure and methods of fabricating thereof202512,484,252Semiconductor devices and methods of manufacturing thereof202512,310,096Method for fabricating semiconductor structure with cutting depth control202512,243,872Semiconductor device structure and methods of forming the same202512,218,130Semiconductor structure cutting process and structures formed thereby202512,166,105Semiconductor device structure with metal gate stacks202412,094,877Semiconductor device and method202412,087,639Fin field-effect transistor devices and methods of forming the same202411,855,085Semiconductor structure cutting process and structures formed thereby202311,830,926Semiconductor device structure with metal gate stacks202311,804,488Semiconductor device and method202311,728,341Semiconductor device and method202311,721,588Semiconductor structure with cutting depth control and method for fabricating the same202311,637,206Metal gate structure and methods of fabricating thereof202311,495,501Fin field-effect transistor devices and methods of forming the same202211,444,080Semiconductor structure cutting process and structures formed thereby202211,398,477Semiconductor device and method202211,289,480Semiconductor device and method202211,211,465Semiconductor device having gate dielectric and inhibitor film over gate dielectric202111,201,230Semiconductor device structure with metal gate stacks202111,145,752Residue removal in metal gate cutting process2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (22)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 22 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 22 | 2021–2026 |