Inventor
Young Kwon Jun
Inventor
Seoul, KR
Overview
Patents· 70 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
G11CStatic stores6%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
B24BMachines, devices, or processes for grinding or polishing1%
C23CCoating metallic material1%
H01LSemiconductor devices1%
PatentTitleYear
10,727,359Solar cell and method of manufacturing therefor20206,979,876'Method for forming isolation layer of semiconductor device'20056,852,606'Method for forming isolation layer of semiconductor device and semiconductor device'20056,544,836'Memory cell, memory device and method of fabricating the same'20036,365,972'Method for forming a metal wiring structure of a semiconductor device'20026,261,896'Memory device and method of forming the same'20016,171,967'Method for forming a self-aligned metal wire of a semiconductor device'20016,169,326'Metal wire of semiconductor device and method for forming the same'20016,064,119'Wiring structure and formation method thereof for semiconductor device'20006,054,346'DRAM cell, DRAM and method for fabricating the same'20006,043,149'Method of purifying a metal line in a semiconductor device'20006,013,578'Method for forming a metal wiring structure of a semiconductor device'20005,960,313'Metal wire of semiconductor device and method for forming the same'19995,949,705'DRAM cell, DRAM and method for fabricating the same'19995,948,705'Method of forming interconnection line'19995,945,706'Memory device'19995,936,297'Programmable semiconductor element having an antifuse structure'19995,915,191'Method for fabricating a semiconductor device with improved device integration and field-region insulation'19995,900,072'Insulating layer structure for semiconductor device'19995,899,717'Method for fabricating semiconductor device'19995,897,369'Method for forming interconnection of a semiconductor device'19995,888,902'Method for forming multilayered interconnection of semiconductor device'19995,882,968'Semiconductor device fabrication method'19995,880,023'Process for formation of wiring layer in semiconductor device'19995,874,357'Method of forming wiring structure of semiconductor device'19995,871,869'Phase shifting mask and method of manufacturing the same'19995,864,154'Semiconductor memory device and method for fabricating the same'19995,837,604'Method for forming interconnection of semiconductor device'19985,798,965'Dynamic random access memory having no capacitor and method for fabricating the same'19985,792,704'Method for fabricating wiring in semiconductor device'19985,790,451'Memory cell, memory device and method of fabricating the same'19985,783,484'Insulating layer planarizing method for semiconductor device using mutually engaged insulating layers to improve strength and thermal deformation'19985,771,189'DRAM cell and method of reading data from DRAM cell'19985,756,397'Method of fabricating a wiring in a semiconductor device'19985,714,780'Semiconductor memory and method of fabricating the same'19985,707,274'Chemical mechanical polishing apparatus for semiconductor wafer'19985,691,221'Method for manufacturing semiconductor memory device having a stacked capacitor'19975,684,331'Multilayered interconnection of semiconductor device'19975,670,806'Semiconductor memory device'19975,654,223'Method for fabricating semiconductor memory element'19975,652,169'Method for fabricating a programmable semiconductor element having an antifuse structure'19975,641,383'Selective etching process'19975,625,208'Method for using a charge injection transistor'19975,612,572'Semiconductor device with an insulation groove'19975,587,331'Method of forming a contact hole for a metal line in a semiconductor device'19965,561,327'Multilayer interconnection structure for a semiconductor device'19965,508,218'Method for fabricating a semiconductor memory'19965,480,824'Semiconductor memory cell capacitor and fabrication method thereof'19965,468,677'Isolation structure of semiconductor device and method for forming the same'19955,461,248'Trench capacitor memory cell and process for formation thereof'19955,459,094'Method for fabricating a capacitor cell in the semiconductor memory device having a step portion'19955,449,635'Method of fabricating a semiconductor memory'19955,427,982'Method for fabricating a semiconductor device'19955,409,856'Process of making a capacitor in a semiconductor memory device'19955,409,855'Process for forming a semiconductor device having a capacitor'19955,397,743'Method of making a semiconductor device'19955,393,373'Methods of patterning and manufacturing semiconductor devices'19955,362,664'Method for fabricating a semiconductor memory device'19945,346,847'Method for fabricating a semiconductor memory device having storage node overlap with bit line'19945,346,845'Process for forming a trench capacitor memory cell'19945,342,800'Method of making memory cell capacitor'19945,336,630'Method of making semiconductor memory device'19945,326,998'Semiconductor memory cell and manufacturing method thereof'19945,270,561'Semiconductor memory device with a ring-shaped bit line'19935,256,248'Method for patterning semiconductor'19935,256,591'Method for forming isolation region in semiconductor device using trench'19935,256,587'Methods of patterning and manufacturing semiconductor devices'19935,231,044'Method of making semiconductor memory elements'19935,229,315'Method for forming an isolated film on a semiconductor device'19935,219,780'Method for fabricating a semiconductor memory cell'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–1996Patents assigned to GOLD STAR ELECTRONICS (24)· patent assignee history
1993–2020Based in Seoul, KR· patent location history
1995Based in Songpa-gu, KR· patent location history
1996–2005Patents assigned to LG SEMICON CO LTD (40)· patent assignee history
2001Patents assigned to HYUNDAI ELECTRONICS IND (2)· patent assignee history
2005Patents assigned to HYNIX SEMICONDUCTOR INC (1)· patent assignee history
2020Patents assigned to JUN YOUNG KWON (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LG SEMICON CO LTD | 40 | 1996–2005 |
| GOLD STAR ELECTRONICS | 24 | 1993–1996 |
| HYUNDAI ELECTRONICS IND | 2 | 2001 |
| HYNIX SEMICONDUCTOR INC | 1 | 2005 |
| JUN YOUNG KWONself | 1 | 2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 69 | 1993–2020 |
| Songpa-gu, KR | 1 | 1995 |