Inventor
Rodney Pelzel
Inventor
Emmaus, PA, US
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
H10NElectric solid-state devices not otherwise provided for7%
H03HImpedance networks, e.g. resonant circuits5%
G02BOptical elements, systems or apparatus2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
11,133,389Pnictide nanocomposite structure for lattice stabilization202111,063,114III-N to rare earth transition in a semiconductor structure202111,005,231Strain-balanced semiconductor structure202110,923,345Epitaxial metal oxide as buffer for epitaxial III-V layers202110,825,912Integrated epitaxial metal electrodes202010,615,141Pnictide buffer structures and devices for GaN base applications202010,605,987Re-based integrated photonic and electronic layered structures202010,573,686Epitaxial AIN/cREO structure for RF filter applications202010,566,944Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride202010,418,457Metal electrode with tunable work functions201910,332,857Rare earth pnictides for strain management201910,128,350Integrated epitaxial metal electrodes201810,075,143Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride20189,768,339'Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2021Patents assigned to IQE PLC (14)· patent assignee history
2017–2021Based in Emmaus, PA, US· patent location history
2021Patents assigned to IQE pic (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IQE PLC | 14 | 2017–2021 |
| IQE pic | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Emmaus, Pennsylvania, US | 14 | 2017–2021 |