Inventor
Glen Fox
Inventor
Colorado Springs, CO, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H10BElectronic memory devices16%
H01LSemiconductor devices12%
H10NElectric solid-state devices not otherwise provided for12%
G11CStatic stores7%
C23CCoating metallic material5%
C30BSingle-crystal growth5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H01HElectric switches2%
PatentTitleYear
10,043,565Ferroelectric mechanical memory based on remanent displacement and method20189,887,205'Ferroelectric mechanical memory and method'20189,761,785'Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing'20179,385,306'Ferroelectric mechanical memory and method'20168,866,367'Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making'20147,344,939'Ferroelectric capacitor with parallel resistance for ferroelectric memory'20087,180,141'Ferroelectric capacitor with parallel resistance for ferroelectric memory'20076,964,873'Semiconductor device having a ferroelectric capacitor and a fabrication process thereof'20056,887,716'Process for producing high quality PZT films for ferroelectric memory integrated circuits'20056,853,535'Method for producing crystallographically textured electrodes for textured PZT capacitors'20056,728,093'Method for producing crystallographically textured electrodes for textured PZT capacitors'20046,682,772'High temperature deposition of Pt/TiOx for bottom electrodes'20046,627,930'Ferroelectric thin film capacitors having multi-layered crystallographic textures'20036,597,028'Capacitively coupled ferroelectric random access memory cell and a method for manufacturing the same'20036,492,673'Charge pump or other charge storage capacitor including PZT layer for combined use as encapsulation layer and dielectric layer of ferroelectric capacitor and a method for manufacturing the same'20026,376,259'Method for manufacturing a ferroelectric memory cell including co-annealing'20026,287,637'Multi-layer approach for optimizing ferroelectric film performance'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2005Patents assigned to RAMTRON INT CORP (7)· patent assignee history
2001–2018Based in Colorado Springs, CO, US· patent location history
2003–2005Patents assigned to FUJITSU LTD (3)· patent assignee history
2007–2008Patents assigned to TEXAS INSTRUMENTS INC (2)· patent assignee history
2014–2018Patents assigned to US ARMY (5)· patent assignee history
2016–2018Patents assigned to US ARMY RES LAB (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RAMTRON INT CORP | 7 | 2001–2005 |
| US ARMY | 5 | 2014–2018 |
| FUJITSU LTD | 3 | 2003–2005 |
| TEXAS INSTRUMENTS INC | 2 | 2007–2008 |
| US ARMY RES LAB | 2 | 2016–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Colorado Springs, CO, US | 17 | 2001–2018 |