Inventor
Tzung-Ting Han
Inventor
Hsinchu, TW
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices33%
H10DInorganic electric semiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H01LSemiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
G11CStatic stores8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,304,680Fabricating semiconductor devices having patterns with different feature sizes201910,290,543Method for manufacturing semiconductor device2019RE046970Diode-less array for one-time programmable memory20189,899,396'Semiconductor device, fabricating method thereof, and fabricating method of memory'20189,847,339Self-aligned multiple patterning semiconductor device fabrication20179,748,332'Non-volatile semiconductor memory'20179,553,047'Method of manufacturing semiconductor devices with combined array and periphery patterning in self-aligned quadruple patterning'20179,536,887'Airgap structure and method of manufacturing thereof'20179,070,753'Method for fabricating memory device'20159,036,393'Diode-less array for one-time programmable memory'20158,916,920'Memory structure with planar upper surface'20148,890,254'Airgap structure and method of manufacturing thereof'20148,779,500'Memory device'20148,623,726'Method for filling a physical isolation trench and integrating a vertical channel array with a periphery circuit'20148,593,850'Diode-less array for one-time programmable memory'20138,552,528'Diode-less array for one-time programmable memory'20138,466,508'Non-volatile memory structure including stress material between stacked patterns'20138,466,064'Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit device'20138,391,063'Method of operating memory cell'20138,183,106'Apparatus and associated method for making a floating gate memory device with buried diffusion dielectric structures and increased gate coupling ratio'20127,889,556'Flash memory having insulating liners between source/drain lines and channels'20117,888,272'Methods for manufacturing memory and logic devices using the same process without the need for additional masks'20117,776,690'Method of forming a contact on a semiconductor device'20107,710,774'NAND type multi-bit charge storage memory array and methods for operating and fabricating the same'20107,668,010'Flash memory having insulating liners between source/drain lines and channels'20107,666,784'Methods of trench and contact formation in memory cells'20107,659,167'Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate'20107,486,534'Diode-less array for one-time programmable memory'20097,435,648'Methods of trench and contact formation in memory cells'20087,341,910'Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate'20087,271,062'Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory'20077,214,983'Non-volatile memory and fabricating method thereof'20077,067,374'Manufacturing methods and structures of memory device'20066,841,446'Fabrication method for a flash memory device'20056,777,764'ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process'20046,624,023'Method for improving the performance of flash memory'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2019Patents assigned to MACRONIX INT CO LTD (36)· patent assignee history
2003–2010Based in I-Lan, TW· patent location history
2004–2019Based in Hsinchu, TW· patent location history
2005Based in I-Ian, TW· patent location history
2006–2017Based in Yilan County, TW· patent location history
2012–2013Patents assigned to CHEN MING SHANG (2)· patent assignee history
2013–2014Patents assigned to HAN TZUNG-TING (9)· patent assignee history
2013–2014Patents assigned to HUANG YU-FONG (6)· patent assignee history
2013–2014Patents assigned to CHEN KUAN-FU (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 36 | 2003–2019 |
| HAN TZUNG-TINGself | 9 | 2013–2014 |
| HUANG YU-FONG | 6 | 2013–2014 |
| CHEN KUAN-FU | 3 | 2013–2014 |
| CHEN MING SHANG | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 17 | 2004–2019 |
| Yilan County, TW | 15 | 2006–2017 |
| I-Lan, TW | 3 | 2003–2010 |
| I-Ian, TW | 1 | 2005 |