Inventor
Jerry M. Woodall
Inventor
Bedford Hills, NY, US
Overview
Patents· 71 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices12%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution12%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
C01BNon-metallic elements5%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
B82YSpecific uses or applications of nanostructures3%
C01FCompounds of the metals beryllium, magnesium, aluminium, calcium, strontium, barium, radium, thorium, or of the rare-earth metals3%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
PatentTitleYear
10,594,249Photovoltaic-phase change battery system for converting intermittent solar power into day and night electric power20209,780,398'Selectively locatable power generation system employing a water splitting process'20179,731,967'System for continuously producing hydrogen, heat and aluminum oxides on demand'20179,718,684'Method for continuously producing hydrogen, heat and aluminum oxides on demand'20179,624,103'Method and system for continuously producing hydrogen, heat and aluminum oxides on-demand'20179,580,310'Method and apparatus for producing hydrogen and aluminum oxide from solid aluminum'20179,056,769'Method and apparatus for producing hydrogen and aluminum oxide from solid aluminum'20158,080,233'Power generation from solid aluminum'20117,938,879'Power generation from solid aluminum'20117,440,157'Optically addressed spatial light modulator and method'20087,179,329'Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices'20076,809,400'Composite pinin collector structure for heterojunction bipolar transistors'20046,607,932'High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region'20036,448,582'High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region'20026,362,495'Dual-metal-trench silicon carbide Schottky pinch rectifier'20025,814,840'Incandescent light energy conversion with reduced infrared emission'19985,508,829'LTG AlGaAs non-linear optical material and devices fabricated therefrom'19965,471,948'Method of making a compound semiconductor having metallic inclusions'19955,371,399'Compound semiconductor having metallic inclusions and devices fabricated therefrom'19945,221,367'Strained defect-free epitaxial mismatched heterostructures and method of fabrication'19935,159,410'Method for in-situ determination of the fermi level in GaAs and similar materials by photoreflectance'19925,132,746'Biaxial-stress barrier shifts in pseudomorphic tunnel devices'19925,121,181'Resonant tunneling photodetector for long wavelength applications'19925,098,859'Method for forming distributed barrier compound semiconductor contacts'19925,049,955'Semiconductor ballistic electron velocity control structure'19915,021,365'Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning'19915,019,530'Method of making metal-insulator-metal junction structures with adjustable barrier heights'19914,920,069'Submicron dimension compound semiconductor fabrication using thermal etching'19904,860,066'Semiconductor electro-optical conversion'19894,860,067'Semiconductor heterostructure adapted for low temperature operation'19894,849,802'Thermally stable low resistance contact'19894,843,450'Compound semiconductor interface control'19894,811,077'Compound semiconductor surface termination'19894,807,006'Heterojunction interdigitated schottky barrier photodetector'19894,801,984'Semiconductor ohmic contact'19894,757,369'Group III-V semiconductor electrical contact'19884,757,358'MESFET semiconductor device fabrication with same metal contacting source, drain and gate regions'19884,751,708'Semiconductor injection lasers'19884,745,204'Process for producing aluminum alkoxide or aluminum aryloxide'19884,638,342'Space charge modulation device'19874,597,825'Intermediate passivation and cleaning of compound semiconductor surfaces'19864,583,110'Intermetallic semiconductor ohmic contact'19864,550,489'Heterojunction semiconductor'19854,550,257'Narrow line width pattern fabrication'19854,550,047'Silicon source component for use in molecular beam epitaxial growth apparatus'19854,533,940'High spatial resolution energy discriminator'19854,532,533'Ballistic conduction semiconductor device'19854,525,731'Semiconductor conversion of optical-to-electrical energy'19854,518,979'Semiconductor transistor with graded base and collector'19854,504,846'Multiwavelength optical-to-electrical logic operations'19854,477,721'Electro-optic signal conversion'19844,472,206'Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing'19844,460,910'Heterojunction semiconductor'19844,448,487'Photon energy conversion'19844,436,768'Refractory structure and process for the preparation thereof'19844,426,237'Volatile metal oxide suppression in molecular beam epitaxy systems'19844,379,005'Semiconductor device fabrication'19834,366,493'Semiconductor ballistic transport device'19824,358,291'Solid state renewable energy supply'19824,354,198'Zinc-sulphide capping layer for gallium-arsenide device'19824,352,117'Electron source'19824,351,706'Electrochemically eroding semiconductor device'19824,316,048'Energy conversion'19824,312,681'Annealing of ion implanted III-V compounds in the presence of another III-V'19824,295,002'Heterojunction V-groove multijunction solar cell'19814,276,137'Control of surface recombination loss in solar cells'19814,202,704'Optical energy conversion'19804,178,195'Semiconductor structure'19794,122,476'Semiconductor heterostructure'19784,005,698'Photon energy converter'19773,963,539'Two stage heteroepitaxial deposition process for GaAsP/Si LED\'s'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–1996Patents assigned to IBM (53)· patent assignee history
1980–1992Based in Bedford Hills, NY, US· patent location history
1985–2020Patents assigned to WOODALL JERRY M (9)· patent assignee history
1991–1996Based in Bedford, NY, US· patent location history
1994–2011Patents assigned to PURDUE RESEARCH FOUNDATION (6)· patent assignee history
2002–2007Patents assigned to UNIV YALE (3)· patent assignee history
2002–2007Based in New Haven, CT, US· patent location history
2008–2011Based in Westpoint, IN, US· patent location history
2015–2020Patents assigned to ROWLEY THOMAS E (7)· patent assignee history
2015–2020Based in Davis, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 53 | 1976–1996 |
| WOODALL JERRY Mself | 9 | 1985–2020 |
| ROWLEY THOMAS E | 7 | 2015–2020 |
| PURDUE RESEARCH FOUNDATION | 6 | 1994–2011 |
| UNIV YALE | 3 | 2002–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Bedford Hills, New York, US | 41 | 1980–1992 |
| Bedford, New York, US | 8 | 1991–1996 |
| Davis, California, US | 7 | 2015–2020 |
| Westpoint, IN, US | 3 | 2008–2011 |
| New Haven, CT, US | 3 | 2002–2007 |