Inventor
MOHAMED N. DARWISH
Inventor
US
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices38%
H10DInorganic electric semiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
PatentTitleYear
12,284,817Trench-gated heterostructure and double-heterostructure active devices202512,057,482MOSFET with distributed doped P-shield zones under trenches202411,888,047Lateral transistors and methods with low-voltage-drop shunt to body diode202411,316,021High density power device with selectively shielded recessed field plate202211,289,596Split gate power device and its method of fabrication2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to MAXPOWER SEMICONDUCTOR INC (5)· patent assignee history
2022–2025Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MAXPOWER SEMICONDUCTOR INC | 5 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 5 | 2022–2025 |