Inventor
Yoshinori Taneda
Inventor
Jyoetsu, JP
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
C09DCoating compositions, e.g. paints, varnishes or lacquers16%
H01LSemiconductor devices16%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds13%
C08LCompositions of macromolecular compounds6%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium4%
C07CAcyclic or carbocyclic compounds1%
C07DHeterocyclic compounds1%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds1%
PatentTitleYear
10,444,628Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process201910,429,739Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process20199,902,875'Composition for forming a coating type BPSG film, substrate, and patterning process'20189,880,470'Composition for forming a coating type silicon-containing film, substrate, and patterning process'20189,627,204'Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition'20179,580,623'Patterning process using a boron phosphorus silicon glass film'20179,522,979'Fluorine-containing silicon compound, method for producing same, and method for producing fluorine-containing silicon resin'20169,377,690'Compositon for forming metal oxide-containing film and patterning process'20169,312,127'Method for producing semiconductor apparatus substrate'20169,188,866'Composition for forming titanium-containing resist underlayer film and patterning process'20159,176,382'Composition for forming titanium-containing resist underlayer film and patterning process'20159,075,309'Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process'20159,069,247'Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process'20158,945,820'Silicon-containing resist underlayer film-forming composition and patterning process'20158,932,953'Composition for forming a silicon-containing resist underlayer film and patterning process using the same'20158,759,220'Patterning process'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2019Patents assigned to SHINETSU CHEMICAL CO (16)· patent assignee history
2014–2017Patents assigned to IBM (2)· patent assignee history
2014–2019Based in Jyoetsu, JP· patent location history
2015Patents assigned to OGIHARA TSUTOMU (1)· patent assignee history
2015Patents assigned to TANEDA YOSHINORI (1)· patent assignee history
2015Patents assigned to UEDA TAKAFUMI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINETSU CHEMICAL CO | 16 | 2014–2019 |
| IBM | 2 | 2014–2017 |
| OGIHARA TSUTOMU | 1 | 2015 |
| TANEDA YOSHINORIself | 1 | 2015 |
| UEDA TAKAFUMI | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Jyoetsu, JP | 16 | 2014–2019 |