Inventor
Hichem M'Saad
Inventor
Santa Clara, CA, US
Overview
Patents· 76 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
C23CCoating metallic material26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H01JElectric discharge tubes or discharge lamps5%
H10DInorganic electric semiconductor devices4%
B08BCleaning in general2%
F16KValves2%
B82YSpecific uses or applications of nanostructures1%
G02BOptical elements, systems or apparatus1%
PatentTitleYear
10,774,423Tunable ground planes in plasma chambers202010,094,486Method and system for supplying a cleaning gas into a process chamber20189,337,072'Apparatus and method for substrate clamping in a plasma chamber'20169,206,511'Method and system for supplying a cleaning gas into a process chamber'20158,753,989'Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure'20148,591,699'Method and system for supplying a cleaning gas into a process chamber'20138,445,075'Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics'20138,389,376'Air gap integration scheme'20138,382,885'Fluid filtration for substrate processing chamber'20138,282,734'Methods to improve the in-film defectivity of PECVD amorphous carbon films'20128,138,104'Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure'20128,129,290'Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure'20128,084,105'Method of depositing boron nitride and boron nitride-derived materials'20118,043,870'CMP pad thickness and profile monitoring system'20117,964,442'Methods to obtain low k dielectric barrier with superior etch resistivity'20117,951,730'Decreasing the etch rate of silicon nitride by carbon addition'20117,923,386'Method to improve the step coverage and pattern loading for dielectric films'20117,871,926'Methods and systems for forming at least one dielectric layer'20117,867,578'Method for depositing an amorphous carbon film with improved density and step coverage'20117,851,384'Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film'20107,802,538'Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors'20107,790,583'Clean process for an electron beam source'20107,790,635'Method to increase the compressive stress of PECVD dielectric films'20107,780,865'Method to improve the step coverage and pattern loading for dielectric films'20107,777,197'Vacuum reaction chamber with x-lamp heater'20107,732,342'Method to increase the compressive stress of PECVD silicon nitride films'20107,723,228'Reduction of hillocks prior to dielectric barrier deposition in Cu damascene'20107,718,548'Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface'20107,718,081'Techniques for the use of amorphous carbon (APF) for various etch and litho integration schemes'20107,704,816'Boron derived materials deposition method'20107,699,935'Method and system for supplying a cleaning gas into a process chamber'20107,700,486'Oxide-like seasoning for dielectric low k films'20107,692,171'Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors'20107,678,662'Memory cell having stressed layers'20107,670,924'Air gap integration scheme'20107,663,121'High efficiency UV curing system'20107,638,440'Method of depositing an amorphous carbon film for etch hardmask application'20097,611,996'Multi-stage curing of low K nano-porous films'20097,601,651'Method to improve the step coverage and pattern loading for dielectric films'20097,572,337'Blocker plate bypass to distribute gases in a chemical vapor deposition system'20097,566,655'Integration process for fabricating stressed transistor structure'20097,514,125'Methods to improve the in-film defectivity of PECVD amorphous carbon films'20097,501,354'Formation of low K material utilizing process having readily cleaned by-products'20097,501,355'Decreasing the etch rate of silicon nitride by carbon addition'20097,459,404'Adhesion improvement for low k dielectrics'20087,425,716'Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to a large area electron beam'20087,407,893'Liquid precursors for the CVD deposition of amorphous carbon films'20087,383,702'Method of forming a phosphorus doped optical core using a PECVD process'20087,371,427'Reduction of hillocks prior to dielectric barrier deposition in Cu damascene'20087,325,419'Method of forming a phosphorus doped optical core using a PECVD process'20087,323,399'Clean process for an electron beam source'20087,259,381'Methodology for determining electron beam penetration depth'20077,259,111'Interface engineering to improve adhesion between low k stacks'20077,166,544'Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors'20077,115,508'Oxide-like seasoning for dielectric low k films'20067,112,541'In-situ oxide capping after CVD low k deposition'20067,105,460'Nitrogen-free dielectric anti-reflective coating and hardmask'20067,080,528'Method of forming a phosphorus doped optical core using a PECVD process'20067,064,078'Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme'20067,060,638'Method of forming low dielectric constant porous films'20067,049,200'Method for forming a low thermal budget spacer'20067,045,798'Characterizing an electron beam treatment apparatus'20067,030,041'Adhesion improvement for low k dielectrics'20067,018,941'Post treatment of low k dielectric films'20066,927,178'Nitrogen-free dielectric anti-reflective coating and hardmask'20056,926,926'Silicon carbide deposited by high density plasma chemical-vapor deposition with bias'20056,853,043'Nitrogen-free antireflective coating for use with photolithographic patterning'20056,803,325'Apparatus for improving barrier layer adhesion to HDP-FSG thin films'20046,713,390'Barrier layer deposition using HDP-CVD'20046,667,248'Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers'20036,521,546'Method of making a fluoro-organosilicate layer'20036,413,871'Nitrogen treatment of polished halogen-doped silicon glass'20026,410,457'Method for improving barrier layer adhesion to HDP-FSG thin films'20026,399,489'Barrier layer deposition using HDP-CVD'20026,121,161'Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions'20006,013,584'Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2020Patents assigned to APPLIED MATERIALS INC (75)· patent assignee history
2000Based in Grenoble, FR· patent location history
2002–2020Based in Santa Clara, CA, US· patent location history
2010–2016Patents assigned to M SAAD HICHEM (11)· patent assignee history
2010–2013Based in Sunnyvale, CA, US· patent location history
2011–2014Patents assigned to XIA LI-QUN (6)· patent assignee history
2011–2016Patents assigned to WITTY DEREK R (5)· patent assignee history
2011–2014Patents assigned to BALSEANU MIHAELA (4)· patent assignee history
2015Based in Tunis, TN· patent location history
2018Based in Phoenix, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 75 | 2000–2020 |
| M SAAD HICHEMself | 11 | 2010–2016 |
| XIA LI-QUN | 6 | 2011–2014 |
| WITTY DEREK R | 5 | 2011–2016 |
| BALSEANU MIHAELA | 4 | 2011–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Santa Clara, California, US | 67 | 2002–2020 |
| Sunnyvale, California, US | 5 | 2010–2013 |
| Grenoble, FR | 2 | 2000 |
| Phoenix, AZ, US | 1 | 2018 |
| Tunis, TN | 1 | 2015 |