Inventor

Wei-Cheng Wu

Inventor
Hsinchu, TW

Overview

230→
Patents
2010–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 230 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10DInorganic electric semiconductor devices17%
H10BElectronic memory devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G11CStatic stores4%
G01RMeasuring electric variables2%
G06FElectric digital data processing1%
H03KPulse technique1%
H05KPrinted circuits1%
PatentTitleYear
10,879,253Semiconductor device and manufacturing method thereof202010,868,024Method of forming embedded nonvolatile memory202010,868,026Method to improve fill-in window for embedded memory202010,868,108Semiconductor device having high voltage lateral capacitor and manufacturing method thereof202010,867,900Dummy metal with zigzagged edges202010,868,027Structure and method for preventing silicide contamination during the manufacture of micro-processors with embedded flash memory202010,861,951Transistor layout to reduce kink effect202010,847,530Nitride-free spacer or oxide spacer for embedded flash memory202010,833,030Semiconductor device and method of manufacture202010,811,426NVM memory HKMG integration technology202010,811,504Semiconductor structure for flash memory cells and method of making same202010,811,394Devices employing thermal and mechanical enhanced layers and methods of forming same202010,796,947Method of manufacturing a semiconductor device202010,783,954Semiconductor memory with respective power voltages for memory cells202010,784,207Multi-stacked package-on-package structures202010,784,270Method to improve fill-in window for embedded memory2020D0896027Baking plate202010,748,895Semiconductor arrangement and formation thereof202010,741,555Metal gate modulation to improve kink effect202010,741,569Semiconductor device and manufacturing method thereof202010,734,295Interposer test structures and methods202010,714,426Semiconductor package and method of forming the same202010,700,045Surface mount device/integrated passive device on package or device structure and methods of forming202010,692,750Method for fabricating a semiconductor device202010,685,704Static random access memory circuit202010,672,778Semiconductor device and manufacturing method thereof202010,672,776Memory circuit having resistive device coupled with supply voltage line202010,663,512Testing of semiconductor chips with microbumps202010,665,600Memory devices and method of fabricating same202010,665,595Metal isolation testing in the context of memory cells202010,658,373Method for manufacturing semiconductor device with metal gate memory device and metal gate logic device202010,650,882Static random access memory with a supplementary driver circuit and method of controlling the same202010,644,013Cell boundary structure for embedded memory202010,629,537Conductive vias in semiconductor packages and methods of forming same202010,553,580Method of manufacturing semiconductor device202010,535,675High voltage CMOS with co-planar upper gate surfaces for embedded non-volatile memory202010,515,977Boundary design to reduce memory array edge CMP dishing effect201910,516,026Split gate memory device and method of fabricating the same201910,515,829Package system for integrated circuits201910,510,654Dummy metal with zigzagged edges201910,510,674Fan-out package having a main die and a dummy die, and method of forming201910,510,855Transistor layout to reduce kink effect201910,510,763Embedded nonvolatile memory and forming method thereof201910,504,877Surface mount device/integrated passive device on package or device structure and methods of forming2019D0868857Torch201910,490,460Semiconductor arrangement and method of forming201910,475,805Nitride-free spacer or oxide spacer for embedded flash memory201910,475,768Redistribution layers in semiconductor packages and methods of forming same2019RE047709Forming grounded through-silicon vias in a semiconductor substrate201910,468,410Metal gate modulation to improve kink effect201910,461,036Multi-stacked package-on-package structures201910,453,813Contact pad for semiconductor device201910,453,932Semiconductor structure for flash memory cells and method of making same2019D0863910Hand-held tool201910,418,361Circuit incorporating multiple gate stack compositions2019D0859109Soldering bit201910,381,358Semiconductor device and manufacturing method thereof201910,373,964Method of writing to memory circuit using resistive device201910,354,961Routing design of dummy metal cap and redistribution line201910,347,606Devices employing thermal and mechanical enhanced layers and methods of forming same201910,347,649Nitride-free spacer or oxide spacer for embedded flash memory201910,332,882Semiconductor device having protective structure over shallow trench isolation region and fabricating method thereof201910,325,918Semiconductor device and manufacturing method thereof201910,325,919Mask design for embedded memory201910,319,681Dummy features in redistribution layers (RDLS) and methods of forming same201910,319,683Multi-stacked package-on-package structures201910,290,584Conductive vias in semiconductor packages and methods of forming same201910,283,512Semiconductor device and manufacturing method thereof201910,276,588HKMG high voltage CMOS for embedded non-volatile memory201910,276,587NVM memory HKMG integration technology201910,269,738Semiconductor device and method of manufacture201910,175,294Testing of semiconductor chips with microbumps201910,176,864Static random access memory circuits201910,163,522Test line letter for embedded non-volatile memory technology201810,164,074Semiconductor device with gate electrode embedded in substrate201810,163,497Three dimensional dual-port bit cell and method of using same201810,163,805Package structure and method for forming the same201810,163,802Fan-out package having a main die and a dummy die, and method of forming201810,163,919Embedded flash memory device with floating gate embedded in a substrate201810,165,682Opening in the pad for bonding integrated passive device in InFO package201810,157,852Multi-stacked package-on-package structures201810,157,825Dummy metal with zigzagged edges201810,147,794Split gate memory device and method of fabricating the same201810,141,288Surface mount device/integrated passive device on package or device structure and methods of forming201810,134,743Structure and method for statice random access memory device of vertical tunneling field effect transistor201810,090,213Interposer test structures and methods201810,068,773Contact formation for split gate flash memory201810,062,648Semiconductor package and method of forming the same201810,062,419Digtial circuit structures201810,056,347Bump structure for yield improvement201810,049,898Semiconductor device packages, packaging methods, and packaged semiconductor devices201810,050,050Semiconductor device with metal gate memory device and metal gate logic device and method for manufacturing the same201810,032,786Semiconductor device and manufacturing method thereof201810,026,741Logic-compatible memory cell manufacturing method and structure thereof20189,997,464Dummy features in redistribution layers (RDLS) and methods of forming same20189,997,235Semiconductor memory with respective power voltages for plurality of memory cells20189,988,264Method of fabricating integrated structure for MEMS device and semiconductor device20189,983,257Test line patterns in split-gate flash technology20189,984,981Packages with interposers and methods for forming the same20189,984,998Devices employing thermal and mechanical enhanced layers and methods of forming same20189,978,759Memory devices and method of forming same20189,972,524Method for fabricating a semiconductor device20189,972,581Routing design of dummy metal cap and redistribution line20189,960,176Nitride-free spacer or oxide spacer for embedded flash memory20189,947,676NVM memory HKMG integration technology20189,941,685Leakage protection method and device having live/neutral wire identification function20189,929,112'Semiconductor device and method of manufacture'20189,928,980'Method of electricity leakage detection and prevention of electrical equipment\'s outer surface and system thereof'20189,929,168'Embedded memory and methods of forming the same'20189,911,805'Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)'20189,905,292'Three dimensional dual-port bit cell and method of using same'20189,878,510'Pressing apparatus and stamp press apparatus'20189,874,732Zoom lens and image device using the same20189,876,021Embedded HKMG non-volatile memory20189,865,605'Memory circuit having resistive device coupled with supply voltage line'20189,865,610'Si recess method in HKMG replacement gate technology'20189,852,957Testing, manufacturing, and packaging methods for semiconductor devices20179,842,848'Embedded HKMG non-volatile memory'20179,842,850'High-K-last manufacturing process for embedded memory with silicon-oxide-nitride-oxide-silicon (SONOS) memory cells'20179,837,322Semiconductor arrangement and method of forming20179,837,130Digtial circuit structures to control leakage current20179,831,262Embedded HKMG non-volatile memory20179,812,426'Integrated fan-out package, semiconductor device, and method of fabricating the same'20179,812,460'NVM memory HKMG integration technology'20179,799,394'Static random access memory (SRAM) with recovery circuit for a write operation'20179,793,286'Embedded HKMG non-volatile memory'20179,786,567'Chip-on-wafer process control monitoring for chip-on-wafer-on-substrate packages'20179,760,509'Memory storage device and control method thereof and memory control circuit unit and module'20179,760,670'Semiconductor device design methods and conductive bump pattern enhancement methods'20179,754,831'Dummy structure for chip-on-wafer-on-substrate'20179,754,955'High-K-last manufacturing process for embedded memory with metal-oxide-nitride-oxide-silicon (MONOS) memory cells'20179,741,690'Redistribution layers in semiconductor packages and methods of forming same'20179,735,245'Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic device'20179,721,947'Semiconductor device and method of manufacturing'20179,711,415'Device for high-K and metal gate stacks'20179,704,565'Method of using a static random access memory'20179,691,840'Cylindrical embedded capacitors'20179,691,686'Contact pad for semiconductor device'20179,685,223'Voltage controller'20179,679,979'Semiconductor structure for flash memory cells and method of making same'20179,673,194'Semiconductor arrangement and formation thereof'20179,673,205'Embedded nonvolatile memory and forming method thereof'20179,659,953'HKMG high voltage CMOS for embedded non-volatile memory'20179,659,620'Memory device with self-boosted mechanism'20179,633,869'Packages with interposers and methods for forming the same'20179,620,372'HK embodied flash memory and methods of forming the same'20179,618,572'Testing of semiconductor chips with microbumps'20179,613,174'Common template for electronic article'20179,589,857'Interposer test structures and methods'20179,583,591'Si recess method in HKMG replacement gate technology'20179,581,638'Chip-on-wafer process control monitoring for chip-on-wafer-on-substrate packages'20179,576,645'Three dimensional dual-port bit cell and method of using same'20179,576,855'Device and methods for high-k and metal gate stacks'20179,570,324'Method of manufacturing package system'20179,570,366'Passivation layer for packaged chip'20179,558,966'Semiconductor device packages, packaging methods, and packaged semiconductor devices'20179,559,177'Memory devices and method of fabricating same'20179,553,053'Bump structure for yield improvement'20179,543,153'Recess technique to embed flash memory in SOI technology'20179,536,598'Memory arrangement'20179,502,514'Memory devices and method of forming same'20169,502,533'Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)'20169,502,343'Dummy metal with zigzagged edges'20169,496,276'CMP fabrication solution for split gate memory embedded in HK-MG process'20169,484,351'Split gate memory device and method of fabricating the same'20169,472,636'Cost-effective gate replacement process'20169,462,692'Test structure and method of testing electrical characteristics of through vias'20169,431,413'STI recess method to embed NVM memory in HKMG replacement gate technology'20169,425,126'Dummy structure for chip-on-wafer-on-substrate'20169,425,206'Boundary scheme for embedded poly-SiON CMOS or NVM in HKMG CMOS technology'20169,397,112'L-shaped capacitor in thin film storage technology'20169,392,266'Three-dimensional display device'20169,390,927'Contact formation for split gate flash memory'20169,378,961'Methods of fabricating multiple gate stack compositions'20169,372,951'Semiconductor device design methods and conductive bump pattern enhancement methods'20169,372,206'Testing of semiconductor chips with microbumps'20169,349,742'Embedded memory and methods of forming the same'20169,287,279'Silicon nitride (SiN) encapsulating layer for silicon nanocrystal memory storage'20169,281,056'Static random access memory and method of using the same'20169,276,010'Dual silicide formation method to embed split gate flash memory in high-k metal gate (HKMG) technology'20169,230,977'Embedded flash memory device with floating gate embedded in a substrate'20169,202,817'Semiconductor device and method for manufacturing the same'20159,184,252'Flash memory embedded with HKMG technology'20159,171,849'Three dimensional dual-port bit cell and method of using same'20159,165,623'Memory arrangement'20159,159,842'Embedded nonvolatile memory'20159,142,414'CMOS devices with metal gates and methods for forming the same'20159,136,393'HK embodied flash memory and methods of forming the same'20159,128,506'Power tracking device and power tracking method'20159,129,823'Silicon recess ETCH and epitaxial deposit for shallow trench isolation (STI)'20159,128,123'Interposer test structures and methods'20159,116,203'Testing of semiconductor chips with microbumps'20159,093,176'Power line lowering for write assisted control scheme'20159,082,651'Memory devices and method of forming same'20159,082,630'Semiconductor device and fabricating method thereof'20159,076,672'Cost-effective gate replacement process'20159,048,233'Package systems having interposers'20159,048,335'Method of fabricating multiple gate stack compositions'20159,013,908'Control scheme for 3D memory IC'20159,003,338'Common template for electronic article'20159,000,533'Device and methods for high-K and metal gate stacks'20158,993,432'Test structure and method of testing electrical characteristics of through vias'20158,969,949'Structure and method for static random access memory device of vertical tunneling field effect transistor'20158,947,953'Bit cell internal voltage control'20158,896,089'Interposers for semiconductor devices and methods of manufacture thereof'20148,878,182'Probe pad design for 3DIC package yield analysis'20148,872,287'Integrated structure for MEMS device and semiconductor device and method of fabricating the same'20148,872,345'Forming grounded through-silicon vias in a semiconductor substrate'20148,853,753'Contact for high-k metal gate device'20148,846,510'Method and structure to boost MOSFET performance and NBTI'20148,829,887'Pulse type layer-ID detector for 3D-IC and method of the same'20148,797,057'Testing of semiconductor chips with microbumps'20148,761,956'Computer and control method for smart fan thereof'20148,753,931'Cost-effective gate replacement process'20148,753,971'Dummy metal design for packaging structures'20148,693,163'Cylindrical embedded capacitors'20148,564,305'Discontinuous type layer-ID detector for 3D-IC and method of the same'20138,558,229'Passivation layer for packaged chip'20138,546,227'Contact for high-K metal gate device'20138,466,651'Multifunctional computer rechargeable battery application system and application method thereof'20138,329,521'Method and device with gate structure formed over the recessed top portion of the isolation structure'20128,283,781'Semiconductor device having pad structure with stress buffer layer'20128,258,606'High frequency flip chip package structure of polymer substrate'20128,193,639'Dummy metal design for packaging structures'20128,169,276'Vertical transmission line structure that includes bump elements for flip-chip mounting'20128,033,039'High frequency flip chip package process of polymer substrate and structure thereof'20117,969,193'Differential sensing and TSV timing control scheme for 3D-IC'20117,940,143'Vertical transmission line structure that includes bump elements for flip-chip mounting'20117,898,081'MEMS device and method of making the same'20117,724,726'Data transmission system for dynamically adjusting PDU length, method thereof, and computer-readable recording medium'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2011–2020Based in Hsinchu, TW· patent location history
2011–2020Based in Hsinchu County, TW· patent location history
2012–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (36)· patent assignee history
2012–2017Patents assigned to WU WEI-CHENG (22)· patent assignee history
2012–2017Patents assigned to HOU SHANG-YUN (13)· patent assignee history
2012–2017Patents assigned to JENG SHIN-PUU (12)· patent assignee history
2012–2020Based in Zhubei City, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (169)· patent assignee history
2016–2020Based in Taichung, TW· patent location history
2018Based in Wenzhou, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD1692015–2020
TAIWAN SEMICONDUCTOR MFG362012–2016
WU WEI-CHENGself222012–2017
HOU SHANG-YUN132012–2017
JENG SHIN-PUU122012–2017
Locations
LocationPatentsSpan
Hsinchu, TW1072011–2020
Zhubei City, TW932012–2020
Hsinchu County, TW162011–2020
Taichung, TW52016–2020
Wenzhou, CN22018