Inventor

Tsuyoshi Horikawa

Inventor

Tokyo, JP

Overview

1993–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 34 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary

C23CCoating metallic material24%

H10DInorganic electric semiconductor devices19%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%

G02BOptical elements, systems or apparatus8%

H10BElectronic memory devices7%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%

H04NPictorial communication, e.g. television4%

G09GArrangements or circuits for control of indicating devices using static means to present variable information3%

H01LSemiconductor devices3%

PatentTitleYear

10,340,399Optical device2019 10,247,882Optical waveguide circuit and method of fabricating same2019 10,162,110Semiconductor device and method for manufacturing the same2018 10,078,182Semiconductor device and method for manufacturing the same2018 9,985,149Semiconductor device and method of manufacturing the same2018 9,869,815'Optical device having a stepwise or tapered light input/output part and manufacturing method therefor'2018 9,335,475'Method of manufacturing an optical device having a stepwise or tapered light input/output part'2016 8,351,805'Power saving processing apparatus, image forming apparatus, and computer readable medium that are adaptable to abnormalities'2013 7,397,094'Semiconductor device and manufacturing method thereof'2008 6,780,476'Method of forming a film using chemical vapor deposition'2004 6,638,880'Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device'2003 6,563,182'Semiconductor device and manufacturing method thereof'2003 6,512,885'Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device'2003 6,470,144'Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby'2002 6,448,191'Method of forming high dielectric constant thin film and method of manufacturing semiconductor device'2002 6,420,191'Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium'2002 6,312,526'Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device'2001 6,273,957'Vaporizing device for CVD source materials and CVD apparatus employing the same'2001 6,239,460'Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium'2001 6,235,649'Method of forming high dielectric constant thin film and method of manufacturing semiconductor device'2001 6,187,622'Semiconductor memory device and method for producing the same'2001 6,179,920'CVD apparatus for forming thin film having high dielectric constant'2001 6,165,556'High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film'2000 6,117,482'Method and apparatus for monitoring CVD liquid source for forming thin film with high dielectric constant'2000 6,110,283'Chemical vapor deposition apparatus'2000 6,110,291'Thin film forming apparatus using laser'2000 6,101,085'High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film'2000 6,049,103'Semiconductor capacitor'2000 5,989,635'High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film'1999 5,939,744'Semiconductor device with x-ray absorption layer'1999 5,882,410'High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film'1999 5,834,060'High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film'1998 5,281,806'Optical writing type liquid crystal light valve and writing apparatus therefor'1994 5,231,282'Optical writing type liquid crystal light valve and writing apparatus therefor'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2003Patents assigned to MITSUBISHI ELECTRIC CORP (24)· patent assignee history

1993–1994Based in Amagasaki, JP· patent location history

1998–2019Based in Tokyo, JP· patent location history

2000–2003Based in Hyogo, JP· patent location history

2008–2016Patents assigned to NAT INST OF ADVANCED IND SCIEN (2)· patent assignee history

2013Based in Kanagawa, JP· patent location history

2016–2019Patents assigned to PHOTONICS ELECTRONICS TECHNOLOGY RES ASS (7)· patent assignee history

2016–2018Patents assigned to OKI ELECTRIC IND CO LTD (2)· patent assignee history

2016–2018Based in Ibaraki, JP· patent location history

2018Patents assigned to RENESAS ELECTRONICS CORP (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MITSUBISHI ELECTRIC CORP	24	1993–2003
PHOTONICS ELECTRONICS TECHNOLOGY RES ASS	7	2016–2019
RENESAS ELECTRONICS CORP	3	2018
NAT INST OF ADVANCED IND SCIEN	2	2008–2016
OKI ELECTRIC IND CO LTD	2	2016–2018

Locations

Location	Patents	Span
Tokyo, JP	18	1998–2019
Hyogo, JP	10	2000–2003
Ibaraki, JP	2	2016–2018
Amagasaki, JP	2	1993–1994
Kanagawa, JP	1	2013