Inventor
WEN-KAI LIN
Inventor
TW
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H01LSemiconductor devices25%
B82YSpecific uses or applications of nanostructures21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C23CCoating metallic material3%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light1%
G02BOptical elements, systems or apparatus1%
G11CStatic stores1%
H10BElectronic memory devices1%
PatentTitleYear
12,560,781Coupled lens structure for mixed/augmented reality system202612,550,402Nanostructure field-effect transistor device and method of forming202612,543,343Semiconductor structure and method for forming the same202612,500,115Semiconductor device and method for fabricating the same202512,429,375Spectrometer system with volume holographic light guide element202512,426,335Reducing k values of dielectric films through anneal202512,363,979Nanosheet field-effect transistor device including multi-layer spacer film and method of forming202512,324,208Method for manufacturing semiconductor device including annealing treatment of inner spacer layer202512,249,639Semiconductor device including multiple inner spacers with different etch rates and method of making202512,206,012Reducing K values of dielectric films through anneal202512,142,668Semiconductor device and method202412,080,775Semiconductor device and forming method thereof202412,040,382Method of forming a nano-FET semiconductor device202412,009,407Nanosheet field-effect transistor device and method of forming202411,923,432Semiconductor device and method202411,901,439Semiconductor device and method202411,855,182Low-k gate spacer and methods for forming the same202311,854,632Semiconductor memory structure and fabrication method thereof202311,682,711Semiconductor device having multi-layered gate spacers202311,664,441Nanosheet field-effect transistor device and method of forming202311,545,559Semiconductor device and method202311,444,177Semiconductor device and method202211,217,679Semiconductor device and method2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (19)· patent assignee history
2022–2026Based in TW· patent location history
2023–2025Patents assigned to UNITED MICROELECTRONICS CORP (2)· patent assignee history
2025–2026Patents assigned to UNIV NAT CENTRAL (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 19 | 2022–2026 |
| UNITED MICROELECTRONICS CORP | 2 | 2023–2025 |
| UNIV NAT CENTRAL | 2 | 2025–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 23 | 2022–2026 |