Inventor
Daewoong Suh
Inventor
Ansan-si, KR
Overview
Patents· 95 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H01LSemiconductor devices20%
H10HInorganic light-emitting semiconductor devices having potential barriers16%
H05KPrinted circuits7%
Y02PClimate change mitigation technologies in the production or processing of goods4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
Y10TTechnical subjects covered by former us classification3%
B82YSpecific uses or applications of nanostructures3%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
10,804,316Wafer level light-emitting diode array202010,784,406Light emitting diode, method of fabricating the same and led module having the same202010,756,237Light emitting diode and light emitting diode package202010,749,080Light-emitting diode and application therefor202010,693,043Light emitting diode and LED module having the same202010,676,375Water purification system using ultraviolet LEDs202010,573,785Light emitting diode, method of fabricating the same and LED module having the same202010,497,836Light-emitting diode and application therefor201910,439,105Light emitting diode and light emitting diode package201910,388,690Wafer level light-emitting diode array201910,319,884Light emitting diode201910,297,720Light emitting diode and method of manufacturing the same201910,213,779Photocatalytic filter, method for manufacturing the same, and method for reactivating the same201910,158,050Light-emitting device and method of manufacturing the same201810,062,810Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode20189,991,425Light emitting device having wide beam angle and method of fabricating the same20189,972,739Light detection device20189,929,080'Forming a stress compensation layer and structures formed thereby'20189,912,790'Sterilizing apparatus for portable terminal'20189,893,240'Light emitting diode and LED module having the same'20189,859,466'Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode'20189,859,108'Substrate regeneration method and regenerated substrate'20189,847,457Light emitting diode, method of fabricating the same and LED module having the same20179,812,602'Light detection device'20179,768,362'Light-emitting device and method of manufacturing the same'20179,711,354'Method of fabricating light emitting device through forming a template for growing semiconductor and separating growth substrate'20179,640,719'Light emitting diode, method of fabricating the same and LED module having the same'20179,634,193'Light emitting diode and method of manufacturing the same'20179,608,186'Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode'20179,608,171'Light-emitting diode and application therefor'20179,590,144'Light emitting device having wide beam angle and method of fabricating the same'20179,548,425'Light-emitting diode and application therefor'20179,536,924'Light-emitting diode and application therefor'20179,520,534'Light emitting diode, method of fabricating the same and LED module having the same'20169,520,543'Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode'20169,520,546'Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode'20169,412,922'Wafer level light-emitting diode array'20169,392,804'Multi-purpose conservation apparatus'20169,356,191'Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same'20169,356,198'Light emitting device having wide beam angle and method of fabricating the same'20169,343,627'Electronic device comprising semiconductor memory having ohmic-contact structure separated from current distributing layer'20169,324,921'Light-emitting diode package'20169,318,529'Wafer level light-emitting diode array'20169,318,530'Wafer level light-emitting diode array and method for manufacturing same'20169,263,658'Light-emitting device and method of manufacturing the same'20169,240,524'Light-emitting device and method of manufacturing the same'20169,218,967'Method for separating epitaxial layer from growth substrate'20159,214,420'Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same'20159,171,976'Light detection device'20159,166,092'Light detection device'20159,166,093'Photo detection device, photo detection package including the photo detection device, and portable device including the photo detection package'20159,142,480'Microelectronic package with high temperature thermal interface material'20159,123,866'Light emitting device having wide beam angle and method of fabricating the same'20159,093,595'Photo detection device'20159,059,359'Photo detection device, photo detection package including the photo detection device, and portable device including the photo detection package'20159,059,012'Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same'20159,048,348'Method of separating substrate and method of fabricating semiconductor device using the same'20158,916,898'Wafer level LED package and method of fabricating the same'20148,901,753'Microelectronic package with self-heating interconnect'20148,558,218'Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivites and structures formed thereby'20138,436,470'Solder joint reliability in microelectronic packaging'20138,409,929'Forming a semiconductor package including a thermal interface material'20138,378,504'Microelectronic package with self-heating interconnect'20138,344,483'Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same'20138,174,113'Methods of fabricating robust integrated heat spreader designs and structures formed thereby'20128,158,968'Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivities and structures formed thereby'20128,124,517'Method of forming an interconnect joint'20128,100,314'Carbon nanotubes solder composite for high performance interconnect'20128,030,757'Forming a semiconductor package including a thermal interface material'20118,018,063'Solder joint reliability in microelectronic packaging'20117,986,209'Inductor using bulk metallic glass material'20117,983,020'Carbon nanotube coated capacitor electrodes'20117,947,134'Process for joining materials using bulk metallic glasses'20117,867,818'Methods and apparatuses for providing stacked-die devices'20117,745,013'Solder foams, nano-porous solders, foamed-solder bumps in chip packages, methods of assembling same, and systems containing same'20107,727,814'Microelectronic package interconnect and method of fabrication thereof'20107,727,815'Reactive gettering in phase change solders to inhibit oxidation at contact surfaces'20107,713,858'Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same'20107,710,709'Carbon nanotube coated capacitor electrodes'20107,705,458'Bulk metallic glass solders, foamed bulk metallic glass solders, foamed-solder bond pads in chip packages, methods of assembling same, and systems containing same'20107,700,476'Solder joint reliability in microelectronic packaging'20107,699,210'Soldering an electronics package to a motherboard'20107,666,768'Through-die metal vias with a dispersed phase of graphitic structures of carbon for reduced thermal expansion and increased electrical conductance'20107,629,203'Thermal interface material for combined reflow'20097,628,871'Bulk metallic glass solder material'20097,578,966'Solders with intermetallic phases, solder bumps made thereof, packages containing same, and methods of assembling packages therewith'20097,535,099'Sintered metallic thermal interface materials for microelectronic cooling assemblies'20097,402,909'Microelectronic package interconnect and method of fabrication thereof'20087,371,674'Nanostructure-based package interconnect'20087,357,293'Soldering an electronics package to a motherboard'20087,291,548'Stress-relief layers and stress-compensation collars with low-temperature solders for board-level joints, and processes of making same'20077,253,088'Stress-relief layers and stress-compensation collars with low-temperature solders for board-level joints, and processes of making same'20077,244,634'Stress-relief layer and stress-compensation collar in contact arrays, and processes of making same'20077,224,067'Intermetallic solder with low melting point'20077,187,068'Methods and apparatuses for providing stacked-die devices'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2018Patents assigned to INTEL CORP (38)· patent assignee history
2007–2018Based in Phoenix, AZ, US· patent location history
2008–2011Based in Chandler, AZ, US· patent location history
2011–2018Patents assigned to SUH DAEWOONG (12)· patent assignee history
2012–2013Patents assigned to RARAVIKAR NACHIKET (3)· patent assignee history
2012–2013Patents assigned to DEPPISCH CARL (2)· patent assignee history
2014–2020Patents assigned to SEOUL VIOSYS CO LTD (55)· patent assignee history
2014–2020Based in Ansan-si, KR· patent location history
2019Based in Seoul, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEOUL VIOSYS CO LTD | 55 | 2014–2020 |
| INTEL CORP | 38 | 2007–2018 |
| SUH DAEWOONGself | 12 | 2011–2018 |
| RARAVIKAR NACHIKET | 3 | 2012–2013 |
| DEPPISCH CARL | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ansan-si, KR | 54 | 2014–2020 |
| Phoenix, AZ, US | 37 | 2007–2018 |
| Chandler, AZ, US | 3 | 2008–2011 |
| Seoul, KR | 1 | 2019 |