Inventor
Nozomi Shimoishizaka
Inventor
Kyoto, JP
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1069%
H05KPrinted circuits22%
H10DInorganic electric semiconductor devices3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
8,283,775'Wiring board, semiconductor device and method for manufacturing the same'20127,847,198'Wiring board and method for manufacturing the same, and semiconductor device'20107,800,209'Wiring board with conductive wirings and protrusion electrodes'20107,800,913'Wiring board and semiconductor device using the same'20107,772,697'Semiconductor device and method for producing the same'20107,629,687'Semiconductor device and method for manufacturing the same'20097,595,222'Semiconductor device and manufacturing method thereof'20097,582,968'Wiring board with a protective film greater in heights than bumps'20097,514,802'Wiring board'20097,508,073'Wiring board, semiconductor device using the same, and method for manufacturing wiring board'20097,442,074'Wiring board and method for producing the same'20087,382,050'Semiconductor device and method for producing the same'20087,379,307'Wiring board and method for manufacturing the same, and semiconductor device'20087,279,357'Method for fabricating a chip-scale-packaging (CSP) having an inductor'20076,954,001'Semiconductor device including a diffusion layer'20056,924,173'Semiconductor device and method for the fabrication thereof'20056,914,331'Semiconductor device having an inductor formed on a region of an insulating film'20056,852,616'Semiconductor device and method for producing the same'20056,812,573'Semiconductor device and method for manufacturing the same'20046,784,557'Semiconductor device including a diffusion layer formed between electrode portions'20046,559,528'Semiconductor device and method for the fabrication thereof'20036,512,298'Semiconductor device and method for producing the same'20036,313,532'Semiconductor device and method for manufacturing the same'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (13)· patent assignee history
2001–2012Based in Kyoto, JP· patent location history
2009–2012Patents assigned to PANASONIC CORP (10)· patent assignee history
2012Patents assigned to NAGAO KOUICHI (1)· patent assignee history
2012Patents assigned to NAKAMURA YOSHIFUMI (1)· patent assignee history
2012Patents assigned to SHIMOISHIZAKA NOZOMI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MATSUSHITA ELECTRIC INDUSTRIAL CO LTD | 13 | 2001–2008 |
| PANASONIC CORP | 10 | 2009–2012 |
| NAGAO KOUICHI | 1 | 2012 |
| NAKAMURA YOSHIFUMI | 1 | 2012 |
| SHIMOISHIZAKA NOZOMIself | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 23 | 2001–2012 |