Inventor
Dana L. Durham
Inventor
East Greenwich, RI, US
Overview
Patents· 39 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices45%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
C11DDetergent compositions6%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds5%
C08LCompositions of macromolecular compounds5%
G03CPhotosensitive materials for photographic purposes5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
C09DCoating compositions, e.g. paints, varnishes or lacquers4%
C07DHeterocyclic compounds2%
PatentTitleYear
7,687,447'Semi-aqueous stripping and cleaning composition containing aminobenzenesulfonic acid'20106,951,710'Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof'20056,821,352'Compositions for removing etching residue and use thereof'20046,677,286'Compositions for removing etching residue and use thereof'20046,368,421'Composition for stripping photoresist and organic materials from substrate surfaces'20026,187,506'Antireflective coating for photoresist compositions'20016,106,995'Antireflective coating material for photoresists'20005,994,430'Antireflective coating compositions for photoresist compositions and use thereof'19995,981,145'Light absorbing polymers'19995,876,897'Positive photoresists containing novel photoactive compounds'19995,866,295'Photosensitive quinolone compounds and a process of preparation'19995,733,714'Antireflective coating for photoresist compositions'19985,688,893'Method of using a Lewis base to control molecular weight of novolak resins'19975,665,517'Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom'19975,652,317'Antireflective coatings for photoresist compositions'19975,652,297'Aqueous antireflective coatings for photoresist compositions'19975,646,218'Novolak resin blends for photoresist applications'19975,624,789'Metal ion reduction in top anti-reflective coatings for photoresisis'19975,614,349'Using a Lewis base to control molecular weight of novolak resins'19975,594,098'Metal ion reduction in novolak resins and photoresists'19975,580,949'Metal ion reduction in novolak resins and photoresists'19965,543,263'Photoresist having a low level of metal ions'19965,516,886'Metal ion reduction in top anti-reflective coatings for photoresists'19965,476,750'Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists'19955,399,456'Image reversal negative working photoresist containing O-quinone diazide and cross-linking compound'19955,374,693'Novolak resin blends for photoresist applications'19945,286,606'Process for producing a developer having a low metal ion level'19945,256,522'Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing'19935,248,585'Polyphosphazene binder resins for photoresists comprising as photosensitizers o-quinone diazide esters'19935,217,840'Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom'19935,039,594'Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate'19915,019,488'Method of producing an image reversal negative photoresist having a photo-labile blocked imide'19914,983,490'Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate'19914,948,697'Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate'19904,931,381'Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment'19904,929,536'Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing'19904,806,458'Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate'19894,692,398'Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate'19874,588,670'Light-sensitive trisester of O-quinone diazide containing composition for the preparation of a positive-acting photoresist'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–1987Patents assigned to HOECHST CO AMERICAN (2)· patent assignee history
1986–1991Based in Bloomsbury, NJ, US· patent location history
1989–1997Patents assigned to HOECHST CELANESE CORP (25)· patent assignee history
1991–1997Based in East Greenwich, RI, US· patent location history
1997–2002Based in Flemington, NJ, US· patent location history
1998–2002Patents assigned to CLARIANT FINANCE BVI LTD (8)· patent assignee history
2004–2010Patents assigned to AIR PROD & CHEM (4)· patent assignee history
2004–2010Based in Pittstown, NJ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HOECHST CELANESE CORP | 25 | 1989–1997 |
| CLARIANT FINANCE BVI LTD | 8 | 1998–2002 |
| AIR PROD & CHEM | 4 | 2004–2010 |
| HOECHST CO AMERICAN | 2 | 1986–1987 |
Locations
| Location | Patents | Span |
|---|---|---|
| East Greenwich, RI, US | 16 | 1991–1997 |
| Flemington, New Jersey, US | 11 | 1997–2002 |
| Bloomsbury, New Jersey, US | 8 | 1986–1991 |
| Pittstown, New Jersey, US | 4 | 2004–2010 |