Inventor
Brendan Jude Moran
Inventor
San Jose, CA, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers26%
H01LSemiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10DInorganic electric semiconductor devices9%
C30BSingle-crystal growth7%
G06FElectric digital data processing2%
G03BApparatus or arrangements for taking photographs or for projecting or viewing them1%
H04LTransmission of digital information, e.g. telegraphic communication1%
H05BElectric heating1%
PatentTitleYear
11,133,442Wavelength converted light emitting device with small source size202111,081,471LED module with hermetic seal of wavelength conversion material202111,003,435Manifest trialing techniques202110,956,577Methods and apparatus for defending against memory-related attacks on devices202110,700,044LED module with hermetic seal of wavelength conversion material202010,680,142Wavelength converted semiconductor light emitting device202010,672,630Method and system for dual stretching of wafers for isolated segmented chip scale packages202010,658,558LED package including converter confinement202010,490,428Method and system for dual stretching of wafers for isolated segmented chip scale packages201910,321,534Color error corrected segmented LED array201910,211,374Light emitting device with reflective sidewall201910,090,444Wavelength converted light emitting device with small source size201810,002,855LED module with hermetic seal of wavelength conversion material20189,871,167'Top emitting semiconductor light emitting device'20189,691,712'Method of controlling stress in group-III nitride films deposited on substrates'20179,660,164'Light emitting device with reduced epi stress'20179,129,977'Method of controlling stress in group-III nitride films deposited on substrates'20159,093,630'Light emitting device with reduced EPI stress'20159,040,332'Highly reflective coating on LED submount'20158,525,230'Field-effect transistor with compositionally graded nitride layer on a silicaon substrate'20137,816,764'Method of controlling stress in gallium nitride films deposited on substrates'20107,687,888'Method of controlling stress in gallium nitride films deposited on substrates'20107,655,090'Method of controlling stress in gallium nitride films deposited on substrates'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2017Patents assigned to UNIV CALIFORNIA (6)· patent assignee history
2010Based in Goleta, CA, US· patent location history
2013–2015Patents assigned to MARCHAND HUGUES (2)· patent assignee history
2013–2021Based in San Jose, CA, US· patent location history
2017–2018Patents assigned to KONINKLIJKE PHILIPS NV (3)· patent assignee history
2018–2021Patents assigned to LUMILEDS LLC (11)· patent assignee history
2018Based in Eindhoven, NL· patent location history
2021Patents assigned to ARM IP LTD (2)· patent assignee history
2021Based in Histon, GB· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LUMILEDS LLC | 11 | 2018–2021 |
| UNIV CALIFORNIA | 6 | 2010–2017 |
| KONINKLIJKE PHILIPS NV | 3 | 2017–2018 |
| ARM IP LTD | 2 | 2021 |
| MARCHAND HUGUES | 2 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 17 | 2013–2021 |
| Goleta, California, US | 3 | 2010 |
| Histon, GB | 2 | 2021 |
| Eindhoven, NL | 1 | 2018 |